Datasheets
NGTB05N60R2DT4G by:

IGBT, 600V, 8A, N-Channel, 2500-REEL

Part Details for NGTB05N60R2DT4G by onsemi

Overview of NGTB05N60R2DT4G by onsemi

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Price & Stock for NGTB05N60R2DT4G

Part # Distributor Description Stock Price Buy
DISTI # NGTB05N60R2DT4G
Avnet Americas Trans IGBT Chip N-CH 600V 16A 3-Pin DPAK T/R - Tape and Reel (Alt: NGTB05N60R2DT4G) RoHS: Compliant Min Qty: 1516 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 12500 Partner Stock
  • 1,516 $0.4884
  • 1,600 $0.4752
  • 3,100 $0.4620
  • 7,600 $0.4488
  • 16,000 $0.4356
  • 76,000 $0.4224
  • 160,000 $0.4092
$0.4092 / $0.4884 Buy Now
Rochester Electronics NGTB05N60R2DT4G - Insulated Gate Bipolar Transistor RoHS: Compliant Status: Obsolete Min Qty: 1 2178
  • 1 $0.4550
  • 25 $0.4459
  • 100 $0.4277
  • 500 $0.4095
  • 1,000 $0.3868
$0.3868 / $0.4550 Buy Now
Flip Electronics Stock, ship today 12500
  • 1 $0.3300
$0.3300 RFQ

Part Details for NGTB05N60R2DT4G

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NGTB05N60R2DT4G Part Data Attributes:

NGTB05N60R2DT4G onsemi
Buy Now Datasheet
Compare Parts:
NGTB05N60R2DT4G onsemi IGBT, 600V, 8A, N-Channel, 2500-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description DPAK-3/2
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 16 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 56 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 186 ns
Turn-on Time-Nom (ton) 139 ns
VCEsat-Max 2 V

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