Part Details for NGTB05N60R2DT4G by onsemi
Overview of NGTB05N60R2DT4G by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for NGTB05N60R2DT4G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NGTB05N60R2DT4G
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Avnet Americas | Trans IGBT Chip N-CH 600V 16A 3-Pin DPAK T/R - Tape and Reel (Alt: NGTB05N60R2DT4G) RoHS: Compliant Min Qty: 1516 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 12500 Partner Stock |
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$0.4092 / $0.4884 | Buy Now |
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Rochester Electronics | NGTB05N60R2DT4G - Insulated Gate Bipolar Transistor RoHS: Compliant Status: Obsolete Min Qty: 1 | 2178 |
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$0.3868 / $0.4550 | Buy Now |
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Flip Electronics | Stock, ship today | 12500 |
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$0.3300 | RFQ |
Part Details for NGTB05N60R2DT4G
NGTB05N60R2DT4G CAD Models
NGTB05N60R2DT4G Part Data Attributes:
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NGTB05N60R2DT4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NGTB05N60R2DT4G
onsemi
IGBT, 600V, 8A, N-Channel, 2500-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | DPAK-3/2 | |
Manufacturer Package Code | 369C | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 16 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 56 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 186 ns | |
Turn-on Time-Nom (ton) | 139 ns | |
VCEsat-Max | 2 V |