Datasheets
NTB011N15MC by: onsemi

MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 10.9 mΩ, 75.4 A, 800-REEL

Part Details for NTB011N15MC by onsemi

Overview of NTB011N15MC by onsemi

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Price & Stock for NTB011N15MC

Part # Distributor Description Stock Price Buy
DISTI # 64AJ4585
Newark Mosfet, N-Ch, 150V, 75.4A, To-263 Rohs Compliant: Yes |Onsemi NTB011N15MC Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 484
  • 1 $5.1100
  • 10 $4.5600
  • 25 $4.3300
  • 50 $4.0100
  • 100 $3.6800
  • 250 $3.3800
  • 500 $3.3100
  • 1,600 $2.7300
$2.7300 / $5.1100 Buy Now
DISTI # 488-NTB011N15MCCT-ND
DigiKey NTB011N15MC Min Qty: 1 Lead time: 24 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1350
In Stock
  • 1 $3.1600
  • 10 $2.8340
  • 25 $2.6792
  • 100 $2.2027
  • 250 $2.0962
  • 800 $2.0962
$2.0962 / $3.1600 Buy Now
DISTI # NTB011N15MC
Avnet Americas Transistor MOSFET N-CH 150V 75.4A 3-Pin D2PAK T/R - Tape and Reel (Alt: NTB011N15MC) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks, 0 Days Container: Reel 1600 Factory Stock
  • 800 $2.5155
  • 1,600 $2.4484
  • 3,200 $2.3813
  • 4,800 $2.3143
  • 6,400 $2.2472
$2.2472 / $2.5155 Buy Now
DISTI # 863-NTB011N15MC
Mouser Electronics MOSFET MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 10.9 mohm, 75.4 A RoHS: Compliant 858
  • 1 $3.1600
  • 10 $2.8400
  • 25 $2.6800
  • 100 $2.2100
  • 250 $2.1000
  • 800 $2.0900
$2.0900 / $3.1600 Buy Now
Future Electronics 150V, 75.4A, 10.9mohm, Gate PowerTrench, N-Channel, D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks Container: Reel 0
Reel
  • 800 $2.1100
  • 1,600 $2.0500
$2.0500 / $2.1100 Buy Now
Future Electronics 150V, 75.4A, 10.9mohm, Gate PowerTrench, N-Channel, D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks Container: Reel 0
Reel
  • 800 $2.1100
  • 1,600 $2.0500
$2.0500 / $2.1100 Buy Now
Future Electronics 150V, 75.4A, 10.9mohm, Gate PowerTrench, N-Channel, D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks Container: Reel 0
Reel
  • 2,500 $2.0500
$2.0500 Buy Now
Rochester Electronics NTB011N15MC - MOSFET - N-Channel Shielded Gate PowerTrench 150 V RoHS: Compliant Status: Active Min Qty: 1 730
  • 1 $2.4500
  • 25 $2.4000
  • 100 $2.3000
  • 500 $2.2000
  • 1,000 $2.0800
$2.0800 / $2.4500 Buy Now
Ameya Holding Limited   Min Qty: 10 7168
  • 10 $4.5687
  • 100 $4.4316
  • 250 $4.2989
  • 500 $4.1689
$4.1689 / $4.5687 Buy Now
DISTI # NTB011N15MC
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 0
  • 800 $2.1000
$2.1000 Buy Now
DISTI # NTB011N15MC
Avnet Silica Transistor MOSFET N-CH 150V 75.4A 3-Pin D2PAK T/R (Alt: NTB011N15MC) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 25 Weeks, 0 Days Silica - 0
Buy Now
Flip Electronics Stock 690
RFQ
Wuhan P&S - Min Qty: 1 560
  • 1 $5.8500
  • 100 $3.7400
  • 500 $3.0800
  • 1,000 $2.8300
$2.8300 / $5.8500 Buy Now

Part Details for NTB011N15MC

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NTB011N15MC Part Data Attributes

NTB011N15MC onsemi
Buy Now Datasheet
Compare Parts:
NTB011N15MC onsemi MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 10.9 mΩ, 75.4 A, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description D2PAK-3/2
Manufacturer Package Code 418AJ
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 24 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 294 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 75.4 A
Drain-source On Resistance-Max 0.0109 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 14 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 136.4 W
Pulsed Drain Current-Max (IDM) 323 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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