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Transistors / Power Field-Effect Transistors / NTB10N60
Datasheets
NTB10N60 by:

10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3

Part Details for NTB10N60 by Rochester Electronics LLC

Overview of NTB10N60 by Rochester Electronics LLC

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Part Details for NTB10N60

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NTB10N60 Part Data Attributes:

Parametric Data
NTB10N60 Rochester Electronics LLC
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NTB10N60 Rochester Electronics LLC 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Package Description D2PAK-3
Pin Count 3
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 35 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTB10N60

This table gives cross-reference parts and alternative options found for NTB10N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTB10N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTB10N60T4 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 onsemi NTB10N60 vs NTB10N60T4
Part Number Description Manufacturer Compare
FQB7N60TM_WS Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB, PLASTIC, D2PAK-3/2 Fairchild Semiconductor Corporation NTB10N60 vs FQB7N60TM_WS
FQB5N60C Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Fairchild Semiconductor Corporation NTB10N60 vs FQB5N60C
STB9NK60ZDT4 7A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 STMicroelectronics NTB10N60 vs STB9NK60ZDT4
SSW7N60B Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation NTB10N60 vs SSW7N60B
STB9NK60ZT4 N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package STMicroelectronics NTB10N60 vs STB9NK60ZT4
IRFBC40SPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix NTB10N60 vs IRFBC40SPBF
STB14NK60ZT4 N-channel 600 V, 0.45 Ohm typ., 13.5 A SuperMESH Power MOSFET in D2PAK package STMicroelectronics NTB10N60 vs STB14NK60ZT4
FQB8N60CFTM 6.26A, 600V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 Rochester Electronics LLC NTB10N60 vs FQB8N60CFTM
STB7NB60-1 7.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 STMicroelectronics NTB10N60 vs STB7NB60-1
IRFBC20SPBF Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier NTB10N60 vs IRFBC20SPBF

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