Datasheets
NTD6N40-1 by: onsemi

6A, 400V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

Part Details for NTD6N40-1 by onsemi

Overview of NTD6N40-1 by onsemi

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Part Details for NTD6N40-1

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NTD6N40-1 Part Data Attributes:

NTD6N40-1 onsemi
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NTD6N40-1 onsemi 6A, 400V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 180 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 96 W
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTD6N40-1

This table gives cross-reference parts and alternative options found for NTD6N40-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD6N40-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF330R1 5.5A, 400V, 1.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited NTD6N40-1 vs IRF330R1
IRF330PBF Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG NTD6N40-1 vs IRF330PBF
IRF330 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG NTD6N40-1 vs IRF330
IRF330 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors NTD6N40-1 vs IRF330
2SK2838(TO-220FL) TRANSISTOR 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, FET General Purpose Power Toshiba America Electronic Components NTD6N40-1 vs 2SK2838(TO-220FL)
2SK2838 TRANSISTOR 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power Toshiba America Electronic Components NTD6N40-1 vs 2SK2838
IRF330 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor NTD6N40-1 vs IRF330
IRF330 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC NTD6N40-1 vs IRF330
2SK2838(TO-220SM) TRANSISTOR 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power Toshiba America Electronic Components NTD6N40-1 vs 2SK2838(TO-220SM)
2N6760E3 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, ROHS COMPLIANT, TO-3, METAL CAN-2 Microsemi Corporation NTD6N40-1 vs 2N6760E3

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