Part Details for NTMD2C02R2SG by Rochester Electronics LLC
Overview of NTMD2C02R2SG by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for NTMD2C02R2SG
NTMD2C02R2SG CAD Models
NTMD2C02R2SG Part Data Attributes:
|
|
NTMD2C02R2SG
Rochester Electronics LLC
Buy Now
Datasheet
|
Compare Parts:
NTMD2C02R2SG
Rochester Electronics LLC
5.2A, 20V, 0.043ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 751-07, SOIC-8
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | SOT | |
| Package Description | LEAD FREE, CASE 751-07, SOIC-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 751-07 | |
| Reach Compliance Code | unknown | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5.2 A | |
| Drain-source On Resistance-Max | 0.043 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTMD2C02R2SG
This table gives cross-reference parts and alternative options found for NTMD2C02R2SG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMD2C02R2SG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDS9952 | Power Field-Effect Transistor, 3A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | National Semiconductor Corporation | NTMD2C02R2SG vs NDS9952 |
| IRF9952 | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | NTMD2C02R2SG vs IRF9952 |
| NDS9958S62Z | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | NTMD2C02R2SG vs NDS9958S62Z |
| NDS9958D84Z | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | NTMD2C02R2SG vs NDS9958D84Z |
| MMDF2C03HDR2 | 4.1A, 30V, 0.07ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SO-8 | onsemi | NTMD2C02R2SG vs MMDF2C03HDR2 |
| RF1K49224 | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.132ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Fairchild Semiconductor Corporation | NTMD2C02R2SG vs RF1K49224 |
| NDS9952 | 3A, 25V, 0.1ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET | Texas Instruments | NTMD2C02R2SG vs NDS9952 |
| AUIRF9952QTR | Power Field-Effect Transistor, 2.8A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | International Rectifier | NTMD2C02R2SG vs AUIRF9952QTR |
| MMDF2C02HDR2 | 3.8A, 20V, 0.09ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOP-8 | onsemi | NTMD2C02R2SG vs MMDF2C02HDR2 |
| IRF7317TRPBF | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | International Rectifier | NTMD2C02R2SG vs IRF7317TRPBF |