Part Details for NVD5117PLT4G by onsemi
Overview of NVD5117PLT4G by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Healthcare
Electronic Manufacturing
Price & Stock for NVD5117PLT4G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
85W3193
|
Newark | Mosfet, P Channel, -60V, 0.016Ohm, -61A, To-252-3, Transistor Polarity:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:61A, On Resistance Rds(On):0.016Ohm, Transistor Mounting:Surface Mount, No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi NVD5117PLT4G Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
|
|
Win Source Electronics | MOSFET P-CH 60V 11A/61A DPAK | 80180 |
|
$1.5080 / $2.2620 | Buy Now |
Part Details for NVD5117PLT4G
NVD5117PLT4G CAD Models
NVD5117PLT4G Part Data Attributes
|
|
NVD5117PLT4G
onsemi
Buy Now
Datasheet
|
Compare Parts:
NVD5117PLT4G
onsemi
Single P-Channel Power MOSFET -60V, -61A, 16mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 240 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 118 W | |
| Pulsed Drain Current-Max (IDM) | 419 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |