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PHB21N06LT-T by:

Power Field-Effect Transistor

Part Details for PHB21N06LT-T by Nexperia

Overview of PHB21N06LT-T by Nexperia

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for PHB21N06LT-T

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PHB21N06LT-T Part Data Attributes

PHB21N06LT-T Nexperia
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PHB21N06LT-T Nexperia Power Field-Effect Transistor
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 34 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 76 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PHB21N06LT-T

This table gives cross-reference parts and alternative options found for PHB21N06LT-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHB21N06LT-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PHB21N06LT/T3 Power Field-Effect Transistor Nexperia PHB21N06LT-T vs PHB21N06LT/T3
PHB21N06LTT/R TRANSISTOR 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3, FET General Purpose Power NXP Semiconductors PHB21N06LT-T vs PHB21N06LTT/R
PHB21N06LT,118 N-channel TrenchMOS logic level FET@en-us D2PAK 3-Pin Nexperia PHB21N06LT-T vs PHB21N06LT,118
PHB21N06LT TRANSISTOR 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors PHB21N06LT-T vs PHB21N06LT
Part Number Description Manufacturer Compare
HUF75309D3ST Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation PHB21N06LT-T vs HUF75309D3ST
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation PHB21N06LT-T vs IRFZ30
IRFR1205TRPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG PHB21N06LT-T vs IRFR1205TRPBF
HUF75321D3ST_NL Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation PHB21N06LT-T vs HUF75321D3ST_NL
HUF76423D3 Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation PHB21N06LT-T vs HUF76423D3
2SK2018-01L Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(L), 3 PIN Fuji Electric Co Ltd PHB21N06LT-T vs 2SK2018-01L
IRFR024N Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier PHB21N06LT-T vs IRFR024N
RFD14N05_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN Fairchild Semiconductor Corporation PHB21N06LT-T vs RFD14N05_NL
MTD1N50E1 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi PHB21N06LT-T vs MTD1N50E1
HUFA75321D3 Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation PHB21N06LT-T vs HUFA75321D3

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