Datasheets
PHN210 by:

TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power

Part Details for PHN210 by NXP Semiconductors

Overview of PHN210 by NXP Semiconductors

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Applications Education and Research Aerospace and Defense Agriculture Technology Robotics and Drones

Price & Stock for PHN210

Part # Distributor Description Stock Price Buy
Quest Components 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA 303
  • 1 $0.6750
  • 37 $0.4500
  • 134 $0.3150
$0.3150 / $0.6750 Buy Now

Part Details for PHN210

PHN210 CAD Models

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PHN210 Part Data Attributes:

PHN210 NXP Semiconductors
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PHN210 NXP Semiconductors TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOIC
Package Description PLASTIC, SO-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 13 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.4 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 4 W
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 40 ns

Alternate Parts for PHN210

This table gives cross-reference parts and alternative options found for PHN210. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHN210, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PHN210-TAPE-7 TRANSISTOR 3.5 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors PHN210 vs PHN210-TAPE-7
934033430118 TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power NXP Semiconductors PHN210 vs 934033430118
934055451118 TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power NXP Semiconductors PHN210 vs 934055451118
PHN210T Power Field-Effect Transistor Nexperia PHN210 vs PHN210T
PHN210T,118 PHN210T - Dual N-channel TrenchMOS intermediate level FET@en-us SOIC 8-Pin Nexperia PHN210 vs PHN210T,118
PHN210 Power Field-Effect Transistor Nexperia PHN210 vs PHN210
PHN210T/T3 Power Field-Effect Transistor Nexperia PHN210 vs PHN210T/T3
PHN210-TAPE-13 TRANSISTOR 3.5 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors PHN210 vs PHN210-TAPE-13
Part Number Description Manufacturer Compare
MMDF2P01HDR2 3.4A, 12V, 0.18ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 onsemi PHN210 vs MMDF2P01HDR2
HP4936DY 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Intersil Corporation PHN210 vs HP4936DY
RF1K49090 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation PHN210 vs RF1K49090
HAT1126R 6A, 60V, 0.085ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation PHN210 vs HAT1126R
HP4936DYT 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Intersil Corporation PHN210 vs HP4936DYT
BSO207P Power Field-Effect Transistor, 5.7A I(D), 20V, 0.045ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOP-8 Infineon Technologies AG PHN210 vs BSO207P
BSO301SPH Power Field-Effect Transistor, 12.6A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG PHN210 vs BSO301SPH
HUF76105DK8T Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 Fairchild Semiconductor Corporation PHN210 vs HUF76105DK8T
NDS8961 Power Field-Effect Transistor, 3.1A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation PHN210 vs NDS8961
BSO211PHXUMA1 Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG PHN210 vs BSO211PHXUMA1

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