Part Details for PHN210T/R by NXP Semiconductors
Overview of PHN210T/R by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
Part Details for PHN210T/R
PHN210T/R CAD Models
PHN210T/R Part Data Attributes:
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PHN210T/R
NXP Semiconductors
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Datasheet
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PHN210T/R
NXP Semiconductors
TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOIC | |
| Package Description | PLASTIC, SMD, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 13 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 3.4 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e4 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 4 W | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 140 ns | |
| Turn-on Time-Max (ton) | 40 ns |
Alternate Parts for PHN210T/R
This table gives cross-reference parts and alternative options found for PHN210T/R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHN210T/R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PHN210-TAPE-7 | TRANSISTOR 3.5 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | PHN210T/R vs PHN210-TAPE-7 |
| 934033430118 | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power | NXP Semiconductors | PHN210T/R vs 934033430118 |
| 934055451118 | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power | NXP Semiconductors | PHN210T/R vs 934055451118 |
| PHN210T | Power Field-Effect Transistor | Nexperia | PHN210T/R vs PHN210T |
| PHN210T,118 | PHN210T - Dual N-channel TrenchMOS intermediate level FET@en-us SOIC 8-Pin | Nexperia | PHN210T/R vs PHN210T,118 |
| PHN210 | Power Field-Effect Transistor | Nexperia | PHN210T/R vs PHN210 |
| PHN210T/T3 | Power Field-Effect Transistor | Nexperia | PHN210T/R vs PHN210T/T3 |
| PHN210-TAPE-13 | TRANSISTOR 3.5 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | PHN210T/R vs PHN210-TAPE-13 |