Datasheets
PHN210T/T3 by:

TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power

Part Details for PHN210T/T3 by NXP Semiconductors

Overview of PHN210T/T3 by NXP Semiconductors

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Applications Education and Research Aerospace and Defense Agriculture Technology Robotics and Drones

Part Details for PHN210T/T3

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PHN210T/T3 Part Data Attributes:

PHN210T/T3 NXP Semiconductors
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PHN210T/T3 NXP Semiconductors TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOIC
Package Description PLASTIC, SOP-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 13 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.4 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PHN210T/T3

This table gives cross-reference parts and alternative options found for PHN210T/T3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHN210T/T3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PHN210-TAPE-7 TRANSISTOR 3.5 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors PHN210T/T3 vs PHN210-TAPE-7
934033430118 TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power NXP Semiconductors PHN210T/T3 vs 934033430118
934055451118 TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power NXP Semiconductors PHN210T/T3 vs 934055451118
PHN210T Power Field-Effect Transistor Nexperia PHN210T/T3 vs PHN210T
PHN210T,118 PHN210T - Dual N-channel TrenchMOS intermediate level FET@en-us SOIC 8-Pin Nexperia PHN210T/T3 vs PHN210T,118
PHN210 Power Field-Effect Transistor Nexperia PHN210T/T3 vs PHN210
PHN210T/T3 Power Field-Effect Transistor Nexperia PHN210T/T3 vs PHN210T/T3
PHN210-TAPE-13 TRANSISTOR 3.5 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors PHN210T/T3 vs PHN210-TAPE-13
Part Number Description Manufacturer Compare
HUF76105DK8T 5A, 30V, 0.072ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, SOIC-8 Rochester Electronics LLC PHN210T/T3 vs HUF76105DK8T
NTMD4N03R2 4A, 30V, 0.06ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOIC-8 Rochester Electronics LLC PHN210T/T3 vs NTMD4N03R2
HUF76105DK8T 5A, 30V, 0.072ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8 Intersil Corporation PHN210T/T3 vs HUF76105DK8T
FDS6892AZ 7.5A, 20V, 0.018ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC PHN210T/T3 vs FDS6892AZ
MMDF3N03HDR2 4.1A, 30V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOP-8 Rochester Electronics LLC PHN210T/T3 vs MMDF3N03HDR2
MMDF2P01HDR2 2A, 12V, 0.2ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 Motorola Mobility LLC PHN210T/T3 vs MMDF2P01HDR2
NDS9956A 3.7A, 30V, 0.08ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SOIC-8 Rochester Electronics LLC PHN210T/T3 vs NDS9956A
FDFS6N303 6A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC PHN210T/T3 vs FDFS6N303
RF1K4909096 3.5A, 12V, 0.05ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Rochester Electronics LLC PHN210T/T3 vs RF1K4909096
FY3ABJ-03 Power Field-Effect Transistor, 3A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric PHN210T/T3 vs FY3ABJ-03

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