Part Details for PHP165NQ08T by Nexperia
Overview of PHP165NQ08T by Nexperia
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for PHP165NQ08T
PHP165NQ08T CAD Models
PHP165NQ08T Part Data Attributes:
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PHP165NQ08T
Nexperia
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Datasheet
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PHP165NQ08T
Nexperia
Power Field-Effect Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-02-01 | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.005 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PHP165NQ08T
This table gives cross-reference parts and alternative options found for PHP165NQ08T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHP165NQ08T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF1010NSPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | PHP165NQ08T vs IRF1010NSPBF |
| IRLZ44ZSTRLPBF | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | PHP165NQ08T vs IRLZ44ZSTRLPBF |
| AUIRFZ44VZSTRR | Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLAINT, PLASTIC, D2PAK-3 | Infineon Technologies AG | PHP165NQ08T vs AUIRFZ44VZSTRR |
| RFD15N06LESM9A | 15A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | PHP165NQ08T vs RFD15N06LESM9A |
| BUK752R7-30B | 75A, 30V, 0.0027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | NXP Semiconductors | PHP165NQ08T vs BUK752R7-30B |
| RFD16N02LSM9A | 16A, 20V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | PHP165NQ08T vs RFD16N02LSM9A |
| 934056398127 | Power Field-Effect Transistor | Nexperia | PHP165NQ08T vs 934056398127 |
| RFD16N02LSM | 16A, 20V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | PHP165NQ08T vs RFD16N02LSM |
| RFD20N03SM | Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Harris Semiconductor | PHP165NQ08T vs RFD20N03SM |
| BUK752R7-30B,127 | N-channel TrenchMOS standard level FET@en-us TO-220 3-Pin | Nexperia | PHP165NQ08T vs BUK752R7-30B,127 |