Part Details for Q67000-S245 by Infineon Technologies AG
Overview of Q67000-S245 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Industrial Automation
Smart Cities
Part Details for Q67000-S245
Q67000-S245 CAD Models
Q67000-S245 Part Data Attributes:
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Q67000-S245
Infineon Technologies AG
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Datasheet
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Q67000-S245
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 10 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for Q67000-S245
This table gives cross-reference parts and alternative options found for Q67000-S245. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of Q67000-S245, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSS123E-6327 | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN | Siemens | Q67000-S245 vs BSS123E-6327 |
| BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Fairchild Semiconductor Corporation | Q67000-S245 vs BSS123 |
| BSS123L6433HTMA1 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | Q67000-S245 vs BSS123L6433HTMA1 |
| BSS123E6433 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Infineon Technologies AG | Q67000-S245 vs BSS123E6433 |
| BSS123LT1 | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Motorola Mobility LLC | Q67000-S245 vs BSS123LT1 |
| BSS123TA | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Zetex / Diodes Inc | Q67000-S245 vs BSS123TA |
| BSS123TA | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | Q67000-S245 vs BSS123TA |
| BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SAME AS SOT-23, 3 PIN | Supertex Inc | Q67000-S245 vs BSS123 |
| BSS123E6327 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Siemens | Q67000-S245 vs BSS123E6327 |
| BSS123-T | TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | NXP Semiconductors | Q67000-S245 vs BSS123-T |