Part Details for SI9926BDY-T1-E3 by Vishay Intertechnologies
Overview of SI9926BDY-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Robotics and Drones
Price & Stock for SI9926BDY-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI9926BDY-T1-E3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 6.2A 8-Pin SOIC T/R - Tape and Reel (Alt: SI9926BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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Bristol Electronics | 3504 |
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Bristol Electronics | 2132 |
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Quest Components | 6200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1778 |
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$0.8050 / $2.3000 | Buy Now |
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Quest Components | 6200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1208 |
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$0.6500 / $2.5000 | Buy Now |
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Quest Components | 6200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 2803 |
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$0.9563 / $2.5500 | Buy Now |
Part Details for SI9926BDY-T1-E3
SI9926BDY-T1-E3 CAD Models
SI9926BDY-T1-E3 Part Data Attributes
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SI9926BDY-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI9926BDY-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 6.2 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.14 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Reference Standard | IEC-61249-2-21 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 75 ns | |
| Turn-on Time-Max (ton) | 130 ns |