Part Details for SI9926BDY-T1 by Vishay Intertechnologies
Overview of SI9926BDY-T1 by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Robotics and Drones
Price & Stock for SI9926BDY-T1
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1316 |
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RFQ |
Part Details for SI9926BDY-T1
SI9926BDY-T1 CAD Models
SI9926BDY-T1 Part Data Attributes:
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SI9926BDY-T1
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SI9926BDY-T1
Vishay Intertechnologies
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 6.2 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.14 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 75 ns | |
Turn-on Time-Max (ton) | 130 ns |
Alternate Parts for SI9926BDY-T1
This table gives cross-reference parts and alternative options found for SI9926BDY-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI9926BDY-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SI4866BDY-T1-GE3 | Small Signal Field-Effect Transistor, 21.5A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | Vishay Intertechnologies | SI9926BDY-T1 vs SI4866BDY-T1-GE3 |
SI9926ADY | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | SI9926BDY-T1 vs SI9926ADY |
SI4866BDY-T1-GE3 | TRANSISTOR 21500 mA, 12 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8, FET General Purpose Small Signal | Vishay Siliconix | SI9926BDY-T1 vs SI4866BDY-T1-GE3 |
SI9926BDY-T1 | Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Siliconix | SI9926BDY-T1 vs SI9926BDY-T1 |
SI9926ADY | Small Signal Field-Effect Transistor, 4.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | SI9926BDY-T1 vs SI9926ADY |
SI4154DY-T1-GE3 | Small Signal Field-Effect Transistor, 24A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | SI9926BDY-T1 vs SI4154DY-T1-GE3 |
SI9407BDY-T1-GE3 | Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | Vishay Intertechnologies | SI9926BDY-T1 vs SI9407BDY-T1-GE3 |
SI9407BDY-T1-GE3 | TRANSISTOR 4700 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8, FET General Purpose Small Signal | Vishay Siliconix | SI9926BDY-T1 vs SI9407BDY-T1-GE3 |