Datasheets
SIHF9640S-GE3 by:

Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,

Part Details for SIHF9640S-GE3 by Vishay Intertechnologies

Overview of SIHF9640S-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SIHF9640S-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIHF9640S-GE3
Avnet Americas HALOGEN FREE IRF9640SPBF P CHANNEL , VBRDSS -200 V, RDSON 500 MOHM , ID -11 A , QG 44 - Tape and Reel (Alt: SIHF9640S-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.0804
  • 2,000 $1.0458
  • 4,000 $1.0111
  • 6,000 $0.9702
  • 8,000 $0.9387
  • 10,000 $0.8946
  • 100,000 $0.8505
$0.8505 / $1.0804 Buy Now
DISTI # 78-SIHF9640S-GE3
Mouser Electronics MOSFET -200V Vds 20V Vgs D2PAK (TO-263) RoHS: Compliant 0
  • 1,000 $0.8900
  • 2,000 $0.8460
  • 5,000 $0.8140
  • 10,000 $0.7870
$0.7870 / $0.8900 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks 0
  • 1,000 $0.8290
$0.8290 Buy Now
DISTI # SIHF9640S-GE3
TTI MOSFET -200V Vds 20V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel Americas - 0
  • 1,000 $0.8700
  • 2,000 $0.8400
  • 3,000 $0.8200
  • 5,000 $0.8000
  • 10,000 $0.7900
$0.7900 / $0.8700 Buy Now
DISTI # SIHF9640S-GE3
TME Transistor: P-MOSFET, unipolar, -200V, -6.8A, Idm: -44A, 125W Min Qty: 1 0
  • 1 $0.9400
  • 5 $0.8500
  • 25 $0.7500
  • 100 $0.6700
  • 500 $0.6300
$0.6300 / $0.9400 RFQ
DISTI # SIHF9640S-GE3
EBV Elektronik HALOGEN FREE IRF9640SPBF P CHANNEL , VBRDSS -200 V, RDSON 500 MOHM , ID -11 A , QG 44 (Alt: SIHF9640S-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days EBV - 800
Buy Now

Part Details for SIHF9640S-GE3

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SIHF9640S-GE3 Part Data Attributes

SIHF9640S-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHF9640S-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 12 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 700 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHF9640S-GE3

This table gives cross-reference parts and alternative options found for SIHF9640S-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF9640S-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF9640SPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN International Rectifier SIHF9640S-GE3 vs IRF9640SPBF
IRF9640STRLPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix SIHF9640S-GE3 vs IRF9640STRLPBF
IRF9640STRRPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix SIHF9640S-GE3 vs IRF9640STRRPBF
IRF9640STRR Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier SIHF9640S-GE3 vs IRF9640STRR
IRF9640STRLPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies SIHF9640S-GE3 vs IRF9640STRLPBF
SIHF9640S-GE3 TRANSISTOR 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix SIHF9640S-GE3 vs SIHF9640S-GE3
IRF9640STRLPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier SIHF9640S-GE3 vs IRF9640STRLPBF
IRF9640STRRPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies SIHF9640S-GE3 vs IRF9640STRRPBF
IRF9640S Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN Vishay Intertechnologies SIHF9640S-GE3 vs IRF9640S
IRF9640STRRPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier SIHF9640S-GE3 vs IRF9640STRRPBF
Part Number Description Manufacturer Compare
SIHF9640S-GE3 TRANSISTOR 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix SIHF9640S-GE3 vs SIHF9640S-GE3
IRF9640STRLPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies SIHF9640S-GE3 vs IRF9640STRLPBF
IRF9640STRLPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier SIHF9640S-GE3 vs IRF9640STRLPBF
IRF9640STRRPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix SIHF9640S-GE3 vs IRF9640STRRPBF
IRF9640SPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies SIHF9640S-GE3 vs IRF9640SPBF
IRF9640STRLPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix SIHF9640S-GE3 vs IRF9640STRLPBF
IRF9640STRRPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies SIHF9640S-GE3 vs IRF9640STRRPBF
IRF9640S Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN Vishay Intertechnologies SIHF9640S-GE3 vs IRF9640S
IRF9640SPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN International Rectifier SIHF9640S-GE3 vs IRF9640SPBF
IRF9640STRRPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier SIHF9640S-GE3 vs IRF9640STRRPBF

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