Part Details for SIHG22N65E-GE3 by Vishay Intertechnologies
Overview of SIHG22N65E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHG22N65E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHG22N65E-GE3
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Avnet Americas | Trans MOSFET N-CH 650V 22A 3-Pin TO-247AC T/R - Bulk (Alt: SIHG22N65E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 21 Weeks, 0 Days Container: Bulk | 0 |
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$2.5515 / $3.2414 | Buy Now |
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DISTI #
78-SIHG22N65E-GE3
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Mouser Electronics | MOSFET 650V Vds 30V Vgs TO-247AC | 0 |
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$2.4600 / $3.0500 | Order Now |
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Future Electronics | E Series N Channel 700 V 0.18 Ω 110 nC Flange Mount Power MOSFET - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks Container: Tube | 0Tube |
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$2.5600 / $2.6500 | Buy Now |
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Future Electronics | E Series N Channel 700 V 0.18 Ω 110 nC Flange Mount Power MOSFET - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Tube | 0Tube |
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$2.5600 / $2.6500 | Buy Now |
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Bristol Electronics | 500 |
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RFQ | ||
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Quest Components | 400 |
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$3.4188 / $6.2160 | Buy Now | |
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DISTI #
SIHG22N65E-GE3
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TME | Transistor: N-MOSFET, unipolar, 650V, 14A, Idm: 56A, 227W, TO247AC Min Qty: 1 | 0 |
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$3.2700 / $4.9000 | RFQ |
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DISTI #
SIHG22N65E-GE3
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EBV Elektronik | Trans MOSFET N-CH 650V 22A 3-Pin TO-247AC T/R (Alt: SIHG22N65E-GE3) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHG22N65E-GE3
SIHG22N65E-GE3 CAD Models
SIHG22N65E-GE3 Part Data Attributes
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SIHG22N65E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHG22N65E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Avalanche Energy Rating (Eas) | 691 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHG22N65E-GE3
This table gives cross-reference parts and alternative options found for SIHG22N65E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHG22N65E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB60R160C6ATMA1 | Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SIHG22N65E-GE3 vs IPB60R160C6ATMA1 |
| IPB60R160C6 | Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | SIHG22N65E-GE3 vs IPB60R160C6 |
| IXKP24N60C5 | Power Field-Effect Transistor, | Littelfuse Inc | SIHG22N65E-GE3 vs IXKP24N60C5 |
| TK25V60X5 | Nch 500V<VDSS≤700V, Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SIHG22N65E-GE3 vs TK25V60X5 |
| IXKH24N60C5 | Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | SIHG22N65E-GE3 vs IXKH24N60C5 |
| IXKP24N60C5 | Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | SIHG22N65E-GE3 vs IXKP24N60C5 |