Part Details for SIHL630STRL-GE3 by Vishay Intertechnologies
Overview of SIHL630STRL-GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHL630STRL-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHL630STRL-GE3
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Avnet Americas | - Tape and Reel (Alt: SIHL630STRL-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.5076 / $0.6448 | Buy Now |
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DISTI #
78-SIHL630STRL-GE3
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Mouser Electronics | MOSFET 200V Vds 10V Vgs D2PAK (TO-263) RoHS: Compliant | 35 |
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$0.4700 / $1.2500 | Buy Now |
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DISTI #
SIHL630STRL-GE3
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TTI | MOSFET 200V Vds 10V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel | Americas - 0 |
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$0.4740 / $0.5130 | Buy Now |
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DISTI #
SIHL630STRL-GE3
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TME | Transistor: N-MOSFET, unipolar, 200V, 5.7A, Idm: 36A, 74W Min Qty: 1 | 0 |
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$0.5470 / $0.8510 | RFQ |
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DISTI #
SIHL630STRL-GE3
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EBV Elektronik | (Alt: SIHL630STRL-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHL630STRL-GE3
SIHL630STRL-GE3 CAD Models
SIHL630STRL-GE3 Part Data Attributes
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SIHL630STRL-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHL630STRL-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 74 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHL630STRL-GE3
This table gives cross-reference parts and alternative options found for SIHL630STRL-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHL630STRL-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHL630STRL-GE3 | TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | SIHL630STRL-GE3 vs SIHL630STRL-GE3 |
| IRL630STRR | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | International Rectifier | SIHL630STRL-GE3 vs IRL630STRR |
| IRL630STRL | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | International Rectifier | SIHL630STRL-GE3 vs IRL630STRL |
| IRL630STRRPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | Vishay Intertechnologies | SIHL630STRL-GE3 vs IRL630STRRPBF |
| IRL630STRRPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | International Rectifier | SIHL630STRL-GE3 vs IRL630STRRPBF |
| IRL630STRLPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | International Rectifier | SIHL630STRL-GE3 vs IRL630STRLPBF |
| IRL630S | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | SIHL630STRL-GE3 vs IRL630S |
| IRL630SPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, SMD-220, 3 PIN | Vishay Siliconix | SIHL630STRL-GE3 vs IRL630SPBF |
| IRL630STRLPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, SMD-220, 3 PIN | Vishay Siliconix | SIHL630STRL-GE3 vs IRL630STRLPBF |
| IRL630STRLPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | Vishay Intertechnologies | SIHL630STRL-GE3 vs IRL630STRLPBF |