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Transistors / Power Field-Effect Transistors / SIHP21N60EF-GE3
Datasheets
SIHP21N60EF-GE3 by:

Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Part Details for SIHP21N60EF-GE3 by Vishay Intertechnologies

Overview of SIHP21N60EF-GE3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SIHP21N60EF-GE3

Part # Distributor Description Stock Price Buy
DISTI # 76Y1448
Newark N-Channel 600V |Vishay SIHP21N60EF-GE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $2.0600
  • 2,500 $1.9200
$1.9200 / $2.0600 Buy Now
DISTI # SIHP21N60EF-GE3
Avnet Americas Trans MOSFET N-CH 600V 21A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP21N60EF-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.4645
  • 2,000 $2.3854
  • 4,000 $2.3064
  • 6,000 $2.2130
  • 8,000 $2.1411
  • 10,000 $2.0405
  • 100,000 $1.9400
$1.9400 / $2.4645 Buy Now
DISTI # 78-SIHP21N60EF-GE3
Mouser Electronics MOSFET 600V Vds 30V Vgs TO-220AB RoHS: Compliant 1975
  • 1 $3.8500
  • 10 $3.2300
  • 50 $2.5100
  • 100 $2.2700
  • 250 $2.1900
  • 500 $2.1000
  • 1,000 $1.8900
  • 2,500 $1.8700
$1.8700 / $3.8500 Buy Now
Future Electronics EF-Series N-Channel 600 V 227 W 0.176 Ω 84 nC Flange Mount Power Mosfet-TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.9800
  • 150 $1.9300
  • 500 $1.8800
  • 1,000 $1.8500
  • 2,000 $1.8000
$1.8000 / $1.9800 Buy Now
Future Electronics EF-Series N-Channel 600 V 227 W 0.176 Ω 84 nC Flange Mount Power Mosfet-TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 22 Weeks Container: Tube 0
Tube
  • 50 $1.9800
  • 150 $1.9300
  • 500 $1.8800
  • 1,000 $1.8500
  • 2,000 $1.8000
$1.8000 / $1.9800 Buy Now
DISTI # SIHP21N60EF-GE3
TTI MOSFET 600V Vds 30V Vgs TO-220AB RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube Americas - 0
  • 1,000 $1.8700
  • 2,000 $1.8300
  • 4,000 $1.8000
$1.8000 / $1.8700 Buy Now
DISTI # SIHP21N60EF-GE3
TME Transistor: N-MOSFET, unipolar, 600V, 14A, Idm: 53A, 227W, TO220AB Min Qty: 1 0
  • 1 $4.1000
  • 5 $3.6800
  • 25 $3.2600
  • 100 $2.9300
  • 500 $2.7300
$2.7300 / $4.1000 RFQ
Chip1Cloud MOSFET N-CH 600V 21A TO220AB 2800
RFQ
DISTI # SIHP21N60EF-GE3
EBV Elektronik Trans MOSFET N-CH 600V 21A 3-Pin TO-220AB (Alt: SIHP21N60EF-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHP21N60EF-GE3

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SIHP21N60EF-GE3 Part Data Attributes:

Parametric Data
SIHP21N60EF-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHP21N60EF-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 22 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 367 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.176 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 53 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHP21N60EF-GE3

This table gives cross-reference parts and alternative options found for SIHP21N60EF-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHP21N60EF-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPA60R160P6 Power Field-Effect Transistor, Infineon Technologies AG SIHP21N60EF-GE3 vs IPA60R160P6
Q67040-S4397 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, D2PAK-3/2 Infineon Technologies AG SIHP21N60EF-GE3 vs Q67040-S4397
SPP20N60C3HKSA1 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SIHP21N60EF-GE3 vs SPP20N60C3HKSA1
Q67040-S4550 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 Infineon Technologies AG SIHP21N60EF-GE3 vs Q67040-S4550
SIHB22N60AE-GE3 Power Field-Effect Transistor, Vishay Intertechnologies SIHP21N60EF-GE3 vs SIHB22N60AE-GE3
IPW60R190C6XK Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SIHP21N60EF-GE3 vs IPW60R190C6XK
SIHP22N60S-E3 Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Intertechnologies SIHP21N60EF-GE3 vs SIHP22N60S-E3
SSF20NS60 Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Suzhou Good-Ark Electronics Co Ltd SIHP21N60EF-GE3 vs SSF20NS60
SPP20N65C3XKSA Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SIHP21N60EF-GE3 vs SPP20N65C3XKSA
APT20N60BC3 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation SIHP21N60EF-GE3 vs APT20N60BC3

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