Part Details for SIHP22N60E-GE3 by Vishay Siliconix
Overview of SIHP22N60E-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHP22N60E-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHP22N60E-GE3-ND
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DigiKey | MOSFET N-CH 600V 21A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube | Temporarily Out of Stock |
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$1.8125 / $3.8800 | Buy Now |
Part Details for SIHP22N60E-GE3
SIHP22N60E-GE3 CAD Models
SIHP22N60E-GE3 Part Data Attributes
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SIHP22N60E-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIHP22N60E-GE3
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
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Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 367 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 21 A | |
Drain-source On Resistance-Max | 0.18 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 227 W | |
Pulsed Drain Current-Max (IDM) | 56 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIHP22N60E-GE3
This table gives cross-reference parts and alternative options found for SIHP22N60E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHP22N60E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SPB20N60C3ATMA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SIHP22N60E-GE3 vs SPB20N60C3ATMA1 |
SPP20N65C3XK | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHP22N60E-GE3 vs SPP20N65C3XK |
SSF20NS60 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | SIHP22N60E-GE3 vs SSF20NS60 |
FCPF165N65S3R0L | Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F, 1000-TUBE | onsemi | SIHP22N60E-GE3 vs FCPF165N65S3R0L |
SIHB21N60EF-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 | Vishay Intertechnologies | SIHP22N60E-GE3 vs SIHB21N60EF-GE3 |
SPB20N60S5ATMA1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SIHP22N60E-GE3 vs SPB20N60S5ATMA1 |
SPP20N60C3 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | SIHP22N60E-GE3 vs SPP20N60C3 |
APT20N60BC3G | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | SIHP22N60E-GE3 vs APT20N60BC3G |
SPP20N65C3XKSA | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHP22N60E-GE3 vs SPP20N65C3XKSA |
APT20N60BC3 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | SIHP22N60E-GE3 vs APT20N60BC3 |