Part Details for SKM300GB125D by SEMIKRON
Overview of SKM300GB125D by SEMIKRON
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SKM300GB125D
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SKM300GB125D
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TME | Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 200A Min Qty: 1 | 0 |
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$286.4600 / $341.3800 | RFQ |
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ComSIT USA | ULTRA FAST IGBT MODULE Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | Europe - 6 |
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RFQ | |
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DISTI #
SKM300GB125D
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
|
RFQ |
Part Details for SKM300GB125D
SKM300GB125D CAD Models
SKM300GB125D Part Data Attributes:
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SKM300GB125D
SEMIKRON
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Datasheet
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Compare Parts:
SKM300GB125D
SEMIKRON
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
| Part Package Code | DO-204 | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 2 | |
| Manufacturer Package Code | CASE D 56 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Semikron | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 300 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| JESD-609 Code | e2 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 490 ns | |
| Turn-on Time-Nom (ton) | 170 ns | |
| VCEsat-Max | 3.85 V |
Alternate Parts for SKM300GB125D
This table gives cross-reference parts and alternative options found for SKM300GB125D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SKM300GB125D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FF200R12KT3HOSA1 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM300GB125D vs FF200R12KT3HOSA1 |
| FF200R12KE4 | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM300GB125D vs FF200R12KE4 |
| BSM200GB120DN2 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM300GB125D vs BSM200GB120DN2 |
| CM300DU-24H | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | SKM300GB125D vs CM300DU-24H |
| BSM150GB120DLCHOSA1 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM300GB125D vs BSM150GB120DLCHOSA1 |
| FF200R12KS4 | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM300GB125D vs FF200R12KS4 |
| APTGT200A120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | SKM300GB125D vs APTGT200A120D3G |
| BSM200GB120DN2 | Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, | Siemens | SKM300GB125D vs BSM200GB120DN2 |
| BSM150GB120DLC | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM300GB125D vs BSM150GB120DLC |
| BSM100GB120DLCHOSA1 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM300GB125D vs BSM100GB120DLCHOSA1 |