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Transistors / Power Field-Effect Transistors / SPB80P06PGATMA1
Datasheets
SPB80P06PGATMA1 by:

Power Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for SPB80P06PGATMA1 by Infineon Technologies AG

Overview of SPB80P06PGATMA1 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for SPB80P06PGATMA1

Part # Distributor Description Stock Price Buy
DISTI # 47W3754
Newark Mosfet, P Channel, 60V, 80A, To-263, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:80A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon SPB80P06PGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $4.4900
  • 10 $3.7800
  • 25 $3.5700
  • 50 $3.3200
  • 100 $3.0600
  • 250 $2.8900
  • 500 $2.7500
  • 1,000 $2.3300
$2.3300 / $4.4900 Buy Now
DISTI # SPB80P06PGATMA1CT-ND
DigiKey MOSFET P-CH 60V 80A TO263-3 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3856
In Stock
  • 1 $4.3200
  • 10 $3.6280
  • 100 $2.9353
  • 500 $2.6092
  • 1,000 $2.2341
  • 2,000 $2.1037
$2.1037 / $4.3200 Buy Now
DISTI # SPB80P06PGATMA1
Avnet Americas Trans MOSFET P-CH 60V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: SPB80P06PGATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel 1000
  • 1,000 $1.5944
  • 2,000 $1.5675
  • 4,000 $1.5406
  • 6,000 $1.5137
  • 8,000 $1.4868
$1.4868 / $1.5944 Buy Now
DISTI # 726-SPB80P06PGATMA1
Mouser Electronics MOSFET P-Ch -60V 80A D2PAK-2 RoHS: Compliant 16
  • 1 $3.7400
  • 10 $3.3600
  • 25 $3.3500
  • 100 $2.8200
  • 250 $2.8100
  • 500 $2.5500
  • 1,000 $2.0900
$2.0900 / $3.7400 Buy Now
DISTI # E02:0323_00170540
Arrow Electronics Trans MOSFET P-CH 60V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Date Code: 2411 Europe - 1000
  • 1,000 $1.9442
  • 2,000 $1.8790
$1.8790 / $1.9442 Buy Now
DISTI # E32:1076_00170540
Arrow Electronics Trans MOSFET P-CH 60V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Europe - 250
  • 1 $3.0590
  • 10 $2.7238
  • 25 $2.6851
  • 100 $2.3845
  • 250 $2.2979
  • 500 $2.2072
  • 1,000 $1.7883
$1.7883 / $3.0590 Buy Now
DISTI # V72:2272_06377271
Arrow Electronics Trans MOSFET P-CH 60V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2326 Container: Cut Strips Americas - 1
  • 1 $2.0320
$2.0320 Buy Now
Future Electronics Single P-Channel 60 V 23 mOhm 115 nC SIPMOS® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks Container: Reel 1000
Reel
  • 1,000 $2.1000
  • 2,000 $2.0700
  • 3,000 $2.0300
$2.0300 / $2.1000 Buy Now
DISTI # 69267978
Verical Trans MOSFET P-CH 60V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 13 Package Multiple: 1 Date Code: 2315 Americas - 1955
  • 13 $2.5625
$2.5625 Buy Now
DISTI # 79021240
Verical Trans MOSFET P-CH 60V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2411 Americas - 1000
  • 1,000 $1.9461
  • 2,000 $1.8809
$1.8809 / $1.9461 Buy Now
DISTI # 78967328
Verical Trans MOSFET P-CH 60V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 4 Package Multiple: 1 Americas - 248
  • 4 $3.0620
  • 10 $2.7265
  • 25 $2.6877
  • 100 $2.3868
  • 250 $2.3001
  • 500 $2.2094
  • 1,000 $1.7901
$1.7901 / $3.0620 Buy Now
Quest Components   6
  • 1 $3.9600
  • 4 $2.6400
$2.6400 / $3.9600 Buy Now
DISTI # SPB80P06PGATMA1
TME Transistor: P-MOSFET, unipolar, -60V, -80A, 340W, PG-TO263-3 Min Qty: 1 901
  • 1 $3.7100
  • 50 $2.9400
  • 100 $2.6100
  • 500 $2.3600
$2.3600 / $3.7100 Buy Now
Ameya Holding Limited   Min Qty: 250 1865
  • 250 $5.1936
  • 500 $5.0393
$5.0393 / $5.1936 Buy Now
DISTI # C1S322000037261
Chip1Stop Trans MOSFET P-CH 60V 80A 3-Pin(2+Tab) TO-263 RoHS: Compliant Container: Cut Tape 1955
  • 1 $2.1600
  • 10 $2.0500
$2.0500 / $2.1600 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 4
  • 1 $3.8500
  • 100 $2.8800
  • 1,000 $2.5000
$2.5000 / $3.8500 Buy Now
New Advantage Corporation Single P-Channel 60 V 23 mOhm 115 nC SIPMOS� Power Mosfet - D2PAK RoHS: Compliant Min Qty: 1 Package Multiple: 1000 2000
  • 1,000 $2.1600
  • 2,000 $2.0100
$2.0100 / $2.1600 Buy Now
Win Source Electronics MOSFET P-CH 60V 80A TO263-3 36218
  • 11 $4.8050
  • 26 $3.9420
  • 40 $3.8190
  • 55 $3.6960
  • 70 $3.5730
  • 94 $3.2030
$3.2030 / $4.8050 Buy Now

Part Details for SPB80P06PGATMA1

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SPB80P06PGATMA1 Part Data Attributes:

Parametric Data
SPB80P06PGATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
SPB80P06PGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 823 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for SPB80P06PGATMA1

This table gives cross-reference parts and alternative options found for SPB80P06PGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB80P06PGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPB80P06P Power Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SPB80P06PGATMA1 vs SPB80P06P
Part Number Description Manufacturer Compare
SPB80P06P 80A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN Rochester Electronics LLC SPB80P06PGATMA1 vs SPB80P06P
SUM55P06-19L-E3 Power Field-Effect Transistor, 55A I(D), 60V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies SPB80P06PGATMA1 vs SUM55P06-19L-E3
SPB80P06P Power Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SPB80P06PGATMA1 vs SPB80P06P
STB80PF55T4 80A, 55V, 0.018ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 STMicroelectronics SPB80P06PGATMA1 vs STB80PF55T4

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