Part Details for SPW24N60CFDXK by Infineon Technologies AG
Overview of SPW24N60CFDXK by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPW24N60CFDXK
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPW24N60CFDFKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 21.7A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: SPW24N60CFDFKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$4.0116 / $4.8712 | Buy Now |
Part Details for SPW24N60CFDXK
SPW24N60CFDXK CAD Models
SPW24N60CFDXK Part Data Attributes:
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SPW24N60CFDXK
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPW24N60CFDXK
Infineon Technologies AG
Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Avalanche Energy Rating (Eas) | 780 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 21.7 A | |
| Drain-source On Resistance-Max | 0.185 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 55 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPW24N60CFDXK
This table gives cross-reference parts and alternative options found for SPW24N60CFDXK. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW24N60CFDXK, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPA60R160P6 | Power Field-Effect Transistor, | Infineon Technologies AG | SPW24N60CFDXK vs IPA60R160P6 |
| Q67040-S4397 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, D2PAK-3/2 | Infineon Technologies AG | SPW24N60CFDXK vs Q67040-S4397 |
| SPP20N60C3HKSA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPW24N60CFDXK vs SPP20N60C3HKSA1 |
| Q67040-S4550 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPW24N60CFDXK vs Q67040-S4550 |
| SIHB22N60AE-GE3 | Power Field-Effect Transistor, | Vishay Intertechnologies | SPW24N60CFDXK vs SIHB22N60AE-GE3 |
| IPW60R190C6XK | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPW24N60CFDXK vs IPW60R190C6XK |
| SIHP22N60S-E3 | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Intertechnologies | SPW24N60CFDXK vs SIHP22N60S-E3 |
| SSF20NS60 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | SPW24N60CFDXK vs SSF20NS60 |
| SPP20N65C3XKSA | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPW24N60CFDXK vs SPP20N65C3XKSA |
| APT20N60BC3 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | SPW24N60CFDXK vs APT20N60BC3 |