Datasheets
STGP8NC60KD by: STMicroelectronics

New short circuit rugged "K" series

Part Details for STGP8NC60KD by STMicroelectronics

Overview of STGP8NC60KD by STMicroelectronics

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Price & Stock for STGP8NC60KD

Part # Distributor Description Stock Price Buy
DISTI # 61AC2099
Newark Igbt, 600V, 15A, To-220, Continuous Collector Current:15A, Collector Emitter Saturation Voltage:2.2V, Power Dissipation:65W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:- Rohs Compliant: Yes |Stmicroelectronics STGP8NC60KD Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 245
  • 1 $0.5190
  • 10 $0.5190
  • 100 $0.5190
  • 500 $0.5190
  • 1,000 $0.5190
  • 2,500 $0.5190
  • 10,000 $0.5190
$0.5190 Buy Now
DISTI # 497-7481-5-ND
DigiKey IGBT 600V 15A TO220 Min Qty: 1 Lead time: 14 Weeks Container: Tube 956
In Stock
  • 1 $1.4600
  • 50 $1.1726
  • 100 $0.9292
  • 500 $0.7876
  • 1,000 $0.6416
  • 2,000 $0.6040
  • 5,000 $0.5752
  • 10,000 $0.5487
$0.5487 / $1.4600 Buy Now
DISTI # STGP8NC60KD
Avnet Americas Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP8NC60KD) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 2,000 $0.6374
  • 4,000 $0.6243
  • 6,000 $0.6111
$0.6111 / $0.6374 Buy Now
DISTI # 61AC2099
Avnet Americas Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube - Bulk (Alt: 61AC2099) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 36 Partner Stock
  • 1 $1.7100
  • 10 $1.4200
  • 100 $1.1300
  • 500 $0.9760
  • 1,000 $0.8160
$0.8160 / $1.7100 Buy Now
DISTI # 511-STGP8NC60KD
Mouser Electronics IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET RoHS: Compliant 198
  • 1 $1.4600
  • 10 $1.1800
  • 100 $0.9300
  • 500 $0.7880
  • 1,000 $0.6410
  • 2,000 $0.6030
  • 5,000 $0.5750
  • 10,000 $0.5480
$0.5480 / $1.4600 Buy Now
STMicroelectronics 8 A, 600 V short-circuit rugged IGBT RoHS: Compliant Min Qty: 1 198
  • 1 $1.4300
  • 10 $1.1600
  • 100 $0.9100
  • 500 $0.7700
$0.7700 / $1.4300 Buy Now
Future Electronics STGP8NC60K Series N-Channel 600V 8 A Short Circuit Rated PowerMESH IGBT - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Container: Bulk 0
Bulk
  • 1 $0.6900
  • 75 $0.6650
  • 250 $0.6400
  • 1,000 $0.6100
  • 3,000 $0.5650
$0.5650 / $0.6900 Buy Now
Future Electronics STGP8NC60K Series N-Channel 600V 8 A Short Circuit Rated PowerMESH IGBT - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Container: Bulk 0
Bulk
  • 1 $0.6900
  • 75 $0.6650
  • 250 $0.6400
  • 1,000 $0.6100
  • 3,000 $0.5650
$0.5650 / $0.6900 Buy Now
Future Electronics STGP8NC60K Series N-Channel 600V 8 A Short Circuit Rated PowerMESH IGBT - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $0.6700
  • 200 $0.6450
  • 1,000 $0.6100
  • 2,000 $0.6000
  • 6,250 $0.5650
$0.5650 / $0.6700 Buy Now
DISTI # STGP8NC60KD
TME Transistor: IGBT, 600V, 8A, 65W, TO220AB Min Qty: 1 274
  • 1 $1.0900
  • 3 $1.0000
  • 10 $0.8800
  • 50 $0.7800
  • 250 $0.7300
$0.7300 / $1.0900 Buy Now
ComSIT USA 600 V-8 A-SHORT CIRCUIT RUGGED IGBT Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant Europe - 900
RFQ
DISTI # STGP8NC60KD
Avnet Silica Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube (Alt: STGP8NC60KD) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Silica - 1200
Buy Now
DISTI # STGP8NC60KD
EBV Elektronik Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube (Alt: STGP8NC60KD) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STGP8NC60KD

STGP8NC60KD CAD Models

STGP8NC60KD Part Data Attributes:

STGP8NC60KD STMicroelectronics
Buy Now Datasheet
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STGP8NC60KD STMicroelectronics New short circuit rugged "K" series
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer STMicroelectronics
Collector Current-Max (IC) 15 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 65 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 242 ns
Turn-on Time-Nom (ton) 23 ns

Alternate Parts for STGP8NC60KD

This table gives cross-reference parts and alternative options found for STGP8NC60KD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STGP8NC60KD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SGP5N60RUFD Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor STGP8NC60KD vs SGP5N60RUFD
GT25Q101 TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components STGP8NC60KD vs GT25Q101
HGT1S12N60B3S9A Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation STGP8NC60KD vs HGT1S12N60B3S9A
HGTP20N60C3R Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor STGP8NC60KD vs HGTP20N60C3R
IRG4BC20FD-STRL Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier STGP8NC60KD vs IRG4BC20FD-STRL
IXGH36N60A3D4 Insulated Gate Bipolar Transistor, Littelfuse Inc STGP8NC60KD vs IXGH36N60A3D4
IRGPS40B120U Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN Infineon Technologies AG STGP8NC60KD vs IRGPS40B120U
SGP5N60RUF Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor STGP8NC60KD vs SGP5N60RUF
IRG4PC40UD Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG STGP8NC60KD vs IRG4PC40UD
IXSH10N120A Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation STGP8NC60KD vs IXSH10N120A

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