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New short circuit rugged "K" series
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61AC2099
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Newark | Igbt, 600V, 15A, To-220, Continuous Collector Current:15A, Collector Emitter Saturation Voltage:2.2V, Power Dissipation:65W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:- Rohs Compliant: Yes |Stmicroelectronics STGP8NC60KD Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 245 |
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$0.5190 | Buy Now |
DISTI #
497-7481-5-ND
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DigiKey | IGBT 600V 15A TO220 Min Qty: 1 Lead time: 14 Weeks Container: Tube |
956 In Stock |
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$0.5487 / $1.4600 | Buy Now |
DISTI #
STGP8NC60KD
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Avnet Americas | Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP8NC60KD) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
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$0.6111 / $0.6374 | Buy Now |
DISTI #
61AC2099
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Avnet Americas | Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube - Bulk (Alt: 61AC2099) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 36 Partner Stock |
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$0.8160 / $1.7100 | Buy Now |
DISTI #
511-STGP8NC60KD
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Mouser Electronics | IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET RoHS: Compliant | 198 |
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$0.5480 / $1.4600 | Buy Now |
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STMicroelectronics | 8 A, 600 V short-circuit rugged IGBT RoHS: Compliant Min Qty: 1 | 198 |
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$0.7700 / $1.4300 | Buy Now |
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Future Electronics | STGP8NC60K Series N-Channel 600V 8 A Short Circuit Rated PowerMESH IGBT - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Container: Bulk | 0Bulk |
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$0.5650 / $0.6900 | Buy Now |
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Future Electronics | STGP8NC60K Series N-Channel 600V 8 A Short Circuit Rated PowerMESH IGBT - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Container: Bulk | 0Bulk |
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$0.5650 / $0.6900 | Buy Now |
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Future Electronics | STGP8NC60K Series N-Channel 600V 8 A Short Circuit Rated PowerMESH IGBT - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.5650 / $0.6700 | Buy Now |
DISTI #
STGP8NC60KD
|
TME | Transistor: IGBT, 600V, 8A, 65W, TO220AB Min Qty: 1 | 274 |
|
$0.7300 / $1.0900 | Buy Now |
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STGP8NC60KD
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGP8NC60KD
STMicroelectronics
New short circuit rugged "K" series
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | STMicroelectronics | |
Collector Current-Max (IC) | 15 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 65 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 242 ns | |
Turn-on Time-Nom (ton) | 23 ns |
This table gives cross-reference parts and alternative options found for STGP8NC60KD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STGP8NC60KD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SGP5N60RUFD | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | STGP8NC60KD vs SGP5N60RUFD |
GT25Q101 | TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | STGP8NC60KD vs GT25Q101 |
HGT1S12N60B3S9A | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | STGP8NC60KD vs HGT1S12N60B3S9A |
HGTP20N60C3R | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Harris Semiconductor | STGP8NC60KD vs HGTP20N60C3R |
IRG4BC20FD-STRL | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | STGP8NC60KD vs IRG4BC20FD-STRL |
IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | STGP8NC60KD vs IXGH36N60A3D4 |
IRGPS40B120U | Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN | Infineon Technologies AG | STGP8NC60KD vs IRGPS40B120U |
SGP5N60RUF | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | STGP8NC60KD vs SGP5N60RUF |
IRG4PC40UD | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | STGP8NC60KD vs IRG4PC40UD |
IXSH10N120A | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | STGP8NC60KD vs IXSH10N120A |