Part Details for STS8NF30L by STMicroelectronics
Overview of STS8NF30L by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Environmental Monitoring
Industrial Automation
Agriculture Technology
Medical Imaging
Electronic Manufacturing
Price & Stock for STS8NF30L
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 2 | 5000 |
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$0.9652 / $2.9250 | Buy Now |
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Quest Components | 4000 |
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$1.0725 / $3.9000 | Buy Now |
Part Details for STS8NF30L
STS8NF30L CAD Models
STS8NF30L Part Data Attributes
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STS8NF30L
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STS8NF30L
STMicroelectronics
8A, 30V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | SOT | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STS8NF30L
This table gives cross-reference parts and alternative options found for STS8NF30L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STS8NF30L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7471TR | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | STS8NF30L vs IRF7471TR |
| IRF7413ZGPBF | Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | International Rectifier | STS8NF30L vs IRF7413ZGPBF |
| FSS244 | Power Field-Effect Transistor, 10A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | SANYO Semiconductor Co Ltd | STS8NF30L vs FSS244 |
| IRF7460 | Power Field-Effect Transistor, 12A I(D), 20V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | STS8NF30L vs IRF7460 |
| 2SK2556 | Power Field-Effect Transistor, 6A I(D), 30V, 0.078ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET | SANYO Electric Co Ltd | STS8NF30L vs 2SK2556 |
| PHN1018 | TRANSISTOR 9.6 A, 25 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power | NXP Semiconductors | STS8NF30L vs PHN1018 |
| IRF7413PBF | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | STS8NF30L vs IRF7413PBF |
| IRF7821PBF | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | STS8NF30L vs IRF7821PBF |
| SI4890DY-T1-E3 | Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | STS8NF30L vs SI4890DY-T1-E3 |
| IRF7413GPBF | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | International Rectifier | STS8NF30L vs IRF7413GPBF |