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Transistors / Power Field-Effect Transistors / STW11NM80
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STW11NM80 by: STMicroelectronics

N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package

Part Details for STW11NM80 by STMicroelectronics

Overview of STW11NM80 by STMicroelectronics

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Price & Stock for STW11NM80

Part # Distributor Description Stock Price Buy
DISTI # 57P2583
Newark Hv Mosfet Mdmesh |Stmicroelectronics STW11NM80 RoHS: Not Compliant Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-4420-5-ND
DigiKey MOSFET N-CH 800V 11A TO247-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube Temporarily Out of Stock
  • 1 $5.6600
  • 30 $4.4837
  • 120 $3.8431
  • 510 $3.4161
  • 1,020 $2.9250
  • 2,010 $2.7542
$2.7542 / $5.6600 Buy Now
DISTI # STW11NM80
Avnet Americas Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $2.4609
$2.4609 Buy Now
DISTI # 511-STW11NM80
Mouser Electronics MOSFETs N-Ch 800 Volt 11 Amp Power MDmesh RoHS: Compliant 1533
  • 1 $5.7800
  • 25 $4.5800
  • 100 $3.9200
  • 250 $3.6200
  • 600 $2.9900
  • 1,200 $2.8100
$2.8100 / $5.7800 Buy Now
STMicroelectronics N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package RoHS: Compliant Min Qty: 1 1533
  • 1 $5.6600
  • 10 $5.6600
  • 25 $4.4900
  • 100 $3.8400
  • 250 $3.5500
$3.5500 / $5.6600 Buy Now
Future Electronics N-Channel 800 V 0.4 Ohm Flange Mount MDmesh Power MosFet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 20 Weeks Container: Tube 0
Tube
  • 30 $2.9500
  • 90 $2.8700
  • 300 $2.7900
  • 600 $2.7400
  • 1,200 $2.6600
$2.6600 / $2.9500 Buy Now
Future Electronics N-Channel 800 V 0.4 Ohm Flange Mount MDmesh Power MosFet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 16 Weeks Container: Tube 0
Tube
  • 30 $2.9500
  • 90 $2.8700
  • 300 $2.7900
  • 600 $2.7400
  • 1,200 $2.6600
$2.6600 / $2.9500 Buy Now
Future Electronics N-Channel 800 V 0.4 Ohm Flange Mount MDmesh Power MosFet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 540 Package Multiple: 30 Lead time: 16 Weeks Container: Tube 0
Tube
  • 30 $2.9600
  • 120 $2.8700
  • 450 $2.7900
  • 750 $2.7600
  • 1,500 $2.6600
$2.6600 / $2.9600 Buy Now
DISTI # STW11NM80
TME Transistor: N-MOSFET, unipolar, 800V, 8A, 150W, TO247 Min Qty: 1 0
  • 1 $3.9800
  • 3 $3.5800
  • 10 $3.1700
  • 30 $2.8400
$2.8400 / $3.9800 RFQ
DISTI # STW11NM80
Avnet Silica Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STW11NM80
EBV Elektronik Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STW11NM80

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STW11NM80 Part Data Attributes

Parametric Data
STW11NM80 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW11NM80 STMicroelectronics N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-247
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 400 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STW11NM80

This table gives cross-reference parts and alternative options found for STW11NM80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW11NM80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments STW11NM80 vs NDB706AL
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STW11NM80 vs IPB80N06S2LH5ATMA1
IXFH12N100F Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation STW11NM80 vs IXFH12N100F
F10F6N Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN Shindengen Electronic Manufacturing Co Ltd STW11NM80 vs F10F6N
STP9NK65Z N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET STMicroelectronics STW11NM80 vs STP9NK65Z
STD5NE10T4 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics STW11NM80 vs STD5NE10T4
NDB705BEL TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power National Semiconductor Corporation STW11NM80 vs NDB705BEL
IXFH30N40Q Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc STW11NM80 vs IXFH30N40Q
SPB80N06S2-07 Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STW11NM80 vs SPB80N06S2-07
SPP80N03S2L-05 Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STW11NM80 vs SPP80N03S2L-05

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