Part Details for SUD19N20-90-T4-E3 by Vishay Intertechnologies
Overview of SUD19N20-90-T4-E3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SUD19N20-90-T4-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SUD19N20-90-T4-E3
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Avnet Americas | Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: SUD19N20-90-T4-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$1.3365 / $1.6979 | Buy Now |
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DISTI #
781-SUD19N20-90T4E3
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Mouser Electronics | MOSFET N-CH 200V 19A RoHS: Compliant | 0 |
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$1.2700 / $1.3200 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks | 0 |
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$1.3100 | Buy Now |
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DISTI #
SUD19N20-90-T4-E3
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TTI | MOSFET N-CH 200V 19A RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 2500 In Stock |
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$1.6500 | Buy Now |
Part Details for SUD19N20-90-T4-E3
SUD19N20-90-T4-E3 CAD Models
SUD19N20-90-T4-E3 Part Data Attributes
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SUD19N20-90-T4-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUD19N20-90-T4-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 19A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 18 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SUD19N20-90-T4-E3
This table gives cross-reference parts and alternative options found for SUD19N20-90-T4-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD19N20-90-T4-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SUD19N20-90-E3 | Power Field-Effect Transistor, 19A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SUD19N20-90-T4-E3 vs SUD19N20-90-E3 |