Datasheets
TPC8037-H by: Toshiba America Electronic Components

TRANSISTOR 12000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal

Part Details for TPC8037-H by Toshiba America Electronic Components

Overview of TPC8037-H by Toshiba America Electronic Components

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for TPC8037-H

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TPC8037-H Part Data Attributes:

TPC8037-H Toshiba America Electronic Components
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TPC8037-H Toshiba America Electronic Components TRANSISTOR 12000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal
Part Life Cycle Code End Of Life
Ihs Manufacturer TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.0139 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 125 pF
JESD-30 Code R-PDSO-G8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TPC8037-H

This table gives cross-reference parts and alternative options found for TPC8037-H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPC8037-H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4174DY-T1-GE3 Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 Vishay Intertechnologies TPC8037-H vs SI4174DY-T1-GE3
FDS6694L86Z Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation TPC8037-H vs FDS6694L86Z
FDS6694_NF073 Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation TPC8037-H vs FDS6694_NF073
FDS6694_NL Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation TPC8037-H vs FDS6694_NL
SI4886DY-T1-GE3 Small Signal Field-Effect Transistor, 9.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies TPC8037-H vs SI4886DY-T1-GE3
FDS6694F011 Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation TPC8037-H vs FDS6694F011
FDS6694 Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation TPC8037-H vs FDS6694

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