Part Details for TSM4953DCSRFG by Taiwan Semiconductor
Overview of TSM4953DCSRFG by Taiwan Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for TSM4953DCSRFG
TSM4953DCSRFG CAD Models
TSM4953DCSRFG Part Data Attributes:
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TSM4953DCSRFG
Taiwan Semiconductor
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Datasheet
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TSM4953DCSRFG
Taiwan Semiconductor
Power Field-Effect Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for TSM4953DCSRFG
This table gives cross-reference parts and alternative options found for TSM4953DCSRFG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TSM4953DCSRFG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TSM4953DCSRLG | Power Field-Effect Transistor | Taiwan Semiconductor | TSM4953DCSRFG vs TSM4953DCSRLG |
| IRF7316GPBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | Infineon Technologies AG | TSM4953DCSRFG vs IRF7316GPBF |
| TSM4953DCSRL | Power Field-Effect Transistor | Taiwan Semiconductor | TSM4953DCSRFG vs TSM4953DCSRL |
| UTM4953L-S08-R | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Unisonic Technologies Co Ltd | TSM4953DCSRFG vs UTM4953L-S08-R |
| IRF7316 | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | TSM4953DCSRFG vs IRF7316 |
| UTM4953L-H-S08-R | Power Field-Effect Transistor, | Unisonic Technologies Co Ltd | TSM4953DCSRFG vs UTM4953L-H-S08-R |
| UTM4953G-S08-R | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Unisonic Technologies Co Ltd | TSM4953DCSRFG vs UTM4953G-S08-R |
| IRF7316PBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | TSM4953DCSRFG vs IRF7316PBF |
| UTM4953G-H-S08-R | Power Field-Effect Transistor, | Unisonic Technologies Co Ltd | TSM4953DCSRFG vs UTM4953G-H-S08-R |
| IRF7316TR | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | TSM4953DCSRFG vs IRF7316TR |