Datasheets
UPA2700GR-A by:

Power Field-Effect Transistor, 17A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8

Part Details for UPA2700GR-A by NEC Electronics Group

Overview of UPA2700GR-A by NEC Electronics Group

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Part Details for UPA2700GR-A

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UPA2700GR-A Part Data Attributes:

UPA2700GR-A NEC Electronics Group
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UPA2700GR-A NEC Electronics Group Power Field-Effect Transistor, 17A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8
Part Life Cycle Code Transferred
Ihs Manufacturer NEC ELECTRONICS CORP
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 28.9 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.0084 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e6
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 68 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for UPA2700GR-A

This table gives cross-reference parts and alternative options found for UPA2700GR-A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPA2700GR-A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
UPA2700GR Power Field-Effect Transistor, 17A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8 NEC Electronics Group UPA2700GR-A vs UPA2700GR
Part Number Description Manufacturer Compare
TPCA8005-H TRANSISTOR 27 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1A, 8 PIN, FET General Purpose Power Toshiba America Electronic Components UPA2700GR-A vs TPCA8005-H
UPA2700GR Power Field-Effect Transistor, 17A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8 NEC Electronics Group UPA2700GR-A vs UPA2700GR
UPA1700A Power Field-Effect Transistor, 7A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 NEC Electronics Group UPA2700GR-A vs UPA1700A
RF1S50N06 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA Intersil Corporation UPA2700GR-A vs RF1S50N06
SI4822DY Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix UPA2700GR-A vs SI4822DY
UPA2701GR Power Field-Effect Transistor, 14A I(D), 30V, 0.0137ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8 NEC Electronics Group UPA2700GR-A vs UPA2701GR
FSS244 Power Field-Effect Transistor, 10A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd UPA2700GR-A vs FSS244
TPC8001 TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-6J1A, 8 PIN, FET General Purpose Power Toshiba America Electronic Components UPA2700GR-A vs TPC8001
IRF7460TR Power Field-Effect Transistor, 12A I(D), 20V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier UPA2700GR-A vs IRF7460TR
TPCA8023-H TRANSISTOR 21 A, 30 V, 0.0157 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1A, 8 PIN, FET General Purpose Power Toshiba America Electronic Components UPA2700GR-A vs TPCA8023-H

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