Datasheets
VQ1001J by: Temic Semiconductors

Power Field-Effect Transistor, 0.83A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for VQ1001J by Temic Semiconductors

Overview of VQ1001J by Temic Semiconductors

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Applications Space Technology Aerospace and Defense Healthcare Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Part Details for VQ1001J

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VQ1001J Part Data Attributes:

VQ1001J Temic Semiconductors
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VQ1001J Temic Semiconductors Power Field-Effect Transistor, 0.83A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Part Life Cycle Code Obsolete
Ihs Manufacturer TEMIC SEMICONDUCTORS
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature FAST SWITCHING, LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 0.83 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T14
Number of Elements 4
Number of Terminals 14
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 3 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for VQ1001J

This table gives cross-reference parts and alternative options found for VQ1001J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VQ1001J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
VQ1001P Power Field-Effect Transistor, 0.85A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, CERAMIC, DIP-14 Supertex Inc VQ1001J vs VQ1001P
Part Number Description Manufacturer Compare
VQ1000J Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix VQ1001J vs VQ1000J
ZVN3306E Power Field-Effect Transistor, 0.27A I(D), 60V, 5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Zetex / Diodes Inc VQ1001J vs ZVN3306E
VQ1000P-2 Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Vishay Siliconix VQ1001J vs VQ1000P-2
ZVN4206E 0.6A, 60V, 1.5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14 Diodes Incorporated VQ1001J vs ZVN4206E
VQ1004P Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-14 Vishay Intertechnologies VQ1001J vs VQ1004P
ZVN2106E 0.45A, 60V, 2ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14 Diodes Incorporated VQ1001J vs ZVN2106E
VQ1000P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix VQ1001J vs VQ1000P
VQ1000P Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors VQ1001J vs VQ1000P
VQ1004J Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Supertex Inc VQ1001J vs VQ1004J
ZVN3306E 0.27A, 60V, 5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14 Diodes Incorporated VQ1001J vs ZVN3306E

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