Part Details for W9725G6JB-25 by Winbond Electronics Corp
Overview of W9725G6JB-25 by Winbond Electronics Corp
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Price & Stock for W9725G6JB-25
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 409 |
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RFQ | ||
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Bristol Electronics | 12 |
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RFQ | ||
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Quest Components | 16M X 16 DDR DRAM, 0.4 ns, PBGA84 | 327 |
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$3.4650 / $6.3000 | Buy Now |
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Quest Components | 16M X 16 DDR DRAM, 0.4 ns, PBGA84 | 78 |
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$2.7300 / $6.3000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 102 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 5 |
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$5.0000 / $7.6900 | Buy Now |
Part Details for W9725G6JB-25
W9725G6JB-25 CAD Models
W9725G6JB-25 Part Data Attributes
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W9725G6JB-25
Winbond Electronics Corp
Buy Now
Datasheet
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Compare Parts:
W9725G6JB-25
Winbond Electronics Corp
DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
Part Package Code | BGA | |
Package Description | 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 | |
Pin Count | 84 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Access Mode | MULTI BANK PAGE BURST | |
Access Time-Max | 0.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 400 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 4,8 | |
JESD-30 Code | R-PBGA-B84 | |
Length | 12.5 mm | |
Memory Density | 268435456 bit | |
Memory IC Type | DDR2 DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 84 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | ||
Organization | 16MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA84,9X15,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 4,8 | |
Standby Current-Max | 0.006 A | |
Supply Current-Max | 0.135 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 8 mm |
Alternate Parts for W9725G6JB-25
This table gives cross-reference parts and alternative options found for W9725G6JB-25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W9725G6JB-25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MT6V16M16F2-3C | Rambus DRAM, 16MX16, CMOS, PBGA84, FBGA-84 | Micron Technology Inc | W9725G6JB-25 vs MT6V16M16F2-3C |
MT47H16M16FG-37EIT:B | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 | Micron Technology Inc | W9725G6JB-25 vs MT47H16M16FG-37EIT:B |
K4R571669E-GCT90 | Rambus DRAM, 16MX16, CMOS, PBGA84, LEAD FREE, WBGA-84 | Samsung Semiconductor | W9725G6JB-25 vs K4R571669E-GCT90 |
IS43DR16160A-37CBLI | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 | Integrated Silicon Solution Inc | W9725G6JB-25 vs IS43DR16160A-37CBLI |
HY5PS561621F-33 | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84 | SK Hynix Inc | W9725G6JB-25 vs HY5PS561621F-33 |
K4T56163QI-ZCE60 | Synchronous DRAM, 16MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | W9725G6JB-25 vs K4T56163QI-ZCE60 |
HYB18T256160BF-3.7 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Qimonda AG | W9725G6JB-25 vs HYB18T256160BF-3.7 |
H5PS2562GFR-S6C | DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, 7.50 X 12.50 MM, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | SK Hynix Inc | W9725G6JB-25 vs H5PS2562GFR-S6C |
MT47H16M16FG-37EL:B | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 | Micron Technology Inc | W9725G6JB-25 vs MT47H16M16FG-37EL:B |
HYB18T256160AF-5 | DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Infineon Technologies AG | W9725G6JB-25 vs HYB18T256160AF-5 |