Part Details for A3I35D025WNR1 by NXP Semiconductors
Overview of A3I35D025WNR1 by NXP Semiconductors
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for A3I35D025WNR1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
65AC3711
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Newark | Airfast Rf Ldmos Wideband Integrated Power Amplifier, 3200-4000 Mhz, 3.4 W Avg., 28 V/ Reel Rohs Compliant: Yes |Nxp A3I35D025WNR1 Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$39.0100 | Buy Now |
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DISTI #
568-A3I35D025WNR1CT-ND
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DigiKey | IC AMP GPS 3.2GHZ-4GHZ TO270WB Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
500 In Stock |
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$38.5226 / $51.8500 | Buy Now |
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DISTI #
A3I35D025WNR1
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Avnet Americas | RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R - Tape and Reel (Alt: A3I35D025WNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$35.5602 / $41.0090 | Buy Now |
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DISTI #
771-A3I35D025WNR1
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Mouser Electronics | RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V RoHS: Compliant | 0 |
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$38.5100 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks Container: Reel | 0Reel |
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$34.9800 | Buy Now |
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DISTI #
A3I35D025WNR1
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Richardson RFPD | RF & MW POWER AMPLIFIER RoHS: Compliant Min Qty: 1 | 622 |
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$41.7900 / $46.4300 | Buy Now |
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DISTI #
A3I35D025WNR1
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Avnet Silica | RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R (Alt: A3I35D025WNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
A3I35D025WNR1
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EBV Elektronik | RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R (Alt: A3I35D025WNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days | EBV - 13000 |
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Buy Now |
Part Details for A3I35D025WNR1
A3I35D025WNR1 CAD Models
A3I35D025WNR1 Part Data Attributes
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A3I35D025WNR1
NXP Semiconductors
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Datasheet
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Compare Parts:
A3I35D025WNR1
NXP Semiconductors
Narrow Band High Power Amplifier
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.33.00.01 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | NXP | |
| Characteristic Impedance | 50 Ω | |
| Construction | COMPONENT | |
| Gain | 26.5 dB | |
| Input Power-Max (CW) | 28 dBm | |
| JESD-609 Code | e3 | |
| Mounting Feature | SURFACE MOUNT | |
| Number of Functions | 1 | |
| Number of Terminals | 17 | |
| Operating Frequency-Max | 4000 MHz | |
| Operating Frequency-Min | 3200 MHz | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Power Supplies | 28 V | |
| RF/Microwave Device Type | NARROW BAND HIGH POWER | |
| Surface Mount | YES | |
| Technology | LDMOS | |
| Terminal Finish | Tin (Sn) | |
| VSWR-Max | 10 |