Part Details for A43L2616BG-7F by AMIC Technology
Overview of A43L2616BG-7F by AMIC Technology
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Industrial Automation
Computing and Data Storage
Healthcare
Renewable Energy
Robotics and Drones
Price & Stock for A43L2616BG-7F
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
NAC | Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54 RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 348 |
|
$1.1500 | Buy Now |
Part Details for A43L2616BG-7F
A43L2616BG-7F CAD Models
A43L2616BG-7F Part Data Attributes
|
A43L2616BG-7F
AMIC Technology
Buy Now
Datasheet
|
Compare Parts:
A43L2616BG-7F
AMIC Technology
Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, CSP-54
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | AMIC TECHNOLOGY CORP | |
Package Description | VFBGA, BGA54,9X9,32 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 6 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 143 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | S-PBGA-B54 | |
Length | 8 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 4MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | VFBGA | |
Package Equivalence Code | BGA54,9X9,32 | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.13 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 8 mm |
Alternate Parts for A43L2616BG-7F
This table gives cross-reference parts and alternative options found for A43L2616BG-7F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of A43L2616BG-7F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K4S64163LH-RN1H0 | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54 | Samsung Semiconductor | A43L2616BG-7F vs K4S64163LH-RN1H0 |
HY5V66ELFP-6 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-54 | SK Hynix Inc | A43L2616BG-7F vs HY5V66ELFP-6 |
HY5V66FLFP-6 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-54 | SK Hynix Inc | A43L2616BG-7F vs HY5V66FLFP-6 |
M52S128168A-7BIG | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54 | Elite Semiconductor Memory Technology Inc | A43L2616BG-7F vs M52S128168A-7BIG |
K4S64163LF-BL1H | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, CSP-54 | Samsung Semiconductor | A43L2616BG-7F vs K4S64163LF-BL1H |
K4S64163LF-RS1L | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, CSP-54 | Samsung Semiconductor | A43L2616BG-7F vs K4S64163LF-RS1L |
IS42RM16400K-6BLI | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54 | Integrated Silicon Solution Inc | A43L2616BG-7F vs IS42RM16400K-6BLI |
K4S64163LF-BS15 | Synchronous DRAM, 4MX16, 9ns, CMOS, PBGA54, CSP-54 | Samsung Semiconductor | A43L2616BG-7F vs K4S64163LF-BS15 |
IS42SM16400G-75BLI | Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54 | Integrated Silicon Solution Inc | A43L2616BG-7F vs IS42SM16400G-75BLI |
K4S641633H-BN1H0 | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 | Samsung Semiconductor | A43L2616BG-7F vs K4S641633H-BN1H0 |