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Part Details for AFGY100T65SPD by onsemi
Overview of AFGY100T65SPD by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for AFGY100T65SPD
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
12AJ6777
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Newark | Igbt, 650V, 100A, 175Deg C, 660W Rohs Compliant: Yes |Onsemi AFGY100T65SPD Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$10.0300 / $13.5400 | Buy Now |
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DISTI #
488-AFGY100T65SPD-ND
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DigiKey | IGBT TRENCH FS 650V 120A TO247-3 Min Qty: 1 Lead time: 23 Weeks Container: Tube | Temporarily Out of Stock |
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$6.6938 / $11.8000 | Buy Now |
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DISTI #
AFGY100T65SPD
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Avnet Americas | Transistor IGBT N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: AFGY100T65SPD) RoHS: Not Compliant Min Qty: 450 Package Multiple: 450 Lead time: 23 Weeks, 0 Days Container: Tube | 0 |
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$6.0875 / $7.2658 | Buy Now |
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DISTI #
863-AFGY100T65SPD
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Mouser Electronics | IGBT Transistors IGBT - 650 V 100 A FS3 for EV traction inverter application IGBT - 650 V 100 A FS3 RoHS: Compliant | 0 |
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$7.9300 / $11.8000 | Order Now |
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Future Electronics | IGBT Trench Field Stop 650 V 120 A 660 W Through Hole TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 0Tube |
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$7.1300 | Buy Now |
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DISTI #
AFGY100T65SPD
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Avnet Americas | Transistor IGBT N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: AFGY100T65SPD) RoHS: Not Compliant Min Qty: 450 Package Multiple: 450 Lead time: 23 Weeks, 0 Days Container: Tube | 0 |
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$6.0875 / $7.2658 | Buy Now |
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DISTI #
AFGY100T65SPD
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Avnet Asia | Transistor IGBT N-CH 650V 120A 3-Pin TO-247 Tube (Alt: AFGY100T65SPD) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 23 Weeks, 0 Days | 0 |
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$5.7756 / $6.4596 | Buy Now |
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DISTI #
AFGY100T65SPD
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Avnet Silica | Transistor IGBT N-CH 650V 120A 3-Pin TO-247 Tube (Alt: AFGY100T65SPD) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 3 Weeks, 3 Days | Silica - 0 |
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Buy Now | |
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DISTI #
AFGY100T65SPD
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EBV Elektronik | Transistor IGBT N-CH 650V 120A 3-Pin TO-247 Tube (Alt: AFGY100T65SPD) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 3 Weeks, 4 Days | EBV - 0 |
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Buy Now | |
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DISTI #
3588810
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element14 Asia-Pacific | IGBT, 650V, 100A, 175DEG C, 660W RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$8.3796 / $12.4659 | Buy Now |
Part Details for AFGY100T65SPD
AFGY100T65SPD CAD Models
AFGY100T65SPD Part Data Attributes:
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AFGY100T65SPD
onsemi
Buy Now
Datasheet
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Compare Parts:
AFGY100T65SPD
onsemi
IGBT - 650 V 100 A FS3 for EV traction inverter application IGBT - 650 V 100 A FS3, 450-TUBE, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 340CU | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 59 Weeks | |
| Date Of Intro | 2020-01-28 | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 120 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6.3 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 882 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.05 V |