Datasheets
AIGW50N65F5XKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for AIGW50N65F5XKSA1 by Infineon Technologies AG

Overview of AIGW50N65F5XKSA1 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for AIGW50N65F5XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC6942
Newark Igbt, Aec-Q101, 650V, 80A, 270W, To-247 Rohs Compliant: Yes |Infineon AIGW50N65F5XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $8.9400
  • 10 $8.3900
  • 25 $7.8300
  • 50 $7.2900
  • 100 $6.9400
  • 480 $6.6000
$6.6000 / $8.9400 Buy Now
DISTI # AIGW50N65F5XKSA1-ND
DigiKey IGBT 650V TO247-3 Min Qty: 1 Lead time: 26 Weeks Container: Tube 234
In Stock
  • 1 $7.8600
  • 30 $6.2750
  • 120 $5.6144
  • 510 $4.9539
  • 1,020 $4.4585
  • 2,010 $4.1778
$4.1778 / $7.8600 Buy Now
DISTI # AIGW50N65F5XKSA1
Avnet Americas Transistor IGBT N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: AIGW50N65F5XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 240 $5.0683
$5.0683 Buy Now
DISTI # 726-AIGW50N65F5XKSA1
Mouser Electronics IGBT Transistors DISCRETES RoHS: Compliant 241
  • 1 $7.8700
  • 10 $6.7400
  • 25 $6.3700
  • 100 $5.6200
  • 240 $4.6100
  • 480 $4.4500
  • 1,200 $4.1700
$4.1700 / $7.8700 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 240 Container: Tube 0
Tube
  • 240 $4.6100
$4.6100 Buy Now
Rochester Electronics AIGW50N65 - DISCRETE SWITCHES RoHS: Compliant Status: Active Min Qty: 1 96
  • 1 $4.7700
  • 25 $4.6700
  • 100 $4.4800
  • 500 $4.2900
  • 1,000 $4.0500
$4.0500 / $4.7700 Buy Now
DISTI # AIGW50N65F5XKSA1
Avnet Americas Transistor IGBT N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: AIGW50N65F5XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 240 $5.0683
$5.0683 Buy Now
DISTI # AIGW50N65F5XKSA1
TME Transistor: IGBT, 650V, 53.5A, 136W, TO247-3, F5 Min Qty: 1 0
  • 1 $5.5900
  • 5 $4.9300
  • 25 $4.4400
  • 100 $4.1400
$4.1400 / $5.5900 RFQ
Ameya Holding Limited   120
RFQ
Ameya Holding Limited   Min Qty: 8 16
  • 8 $9.0830
  • 16 $8.6300
$8.6300 / $9.0830 Buy Now
DISTI # AIGW50N65F5XKSA1
Avnet Americas Transistor IGBT N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: AIGW50N65F5XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 240 $5.0683
$5.0683 Buy Now
DISTI # SP001346882
EBV Elektronik Transistor IGBT N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP001346882) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 3 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 2986330
element14 Asia-Pacific IGBT, AEC-Q101, 650V, 80A, 270W, TO-247 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $8.2563
  • 10 $6.9499
  • 100 $5.1959
  • 500 $4.7850
  • 1,000 $4.3740
$4.3740 / $8.2563 Buy Now
DISTI # 2986330
Farnell IGBT, AEC-Q101, 650V, 80A, 270W, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each 0
  • 1 $8.6567
  • 5 $7.6836
  • 10 $6.6979
  • 50 $6.1418
  • 100 $5.5858
  • 250 $5.0044
$5.0044 / $8.6567 Buy Now

Part Details for AIGW50N65F5XKSA1

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AIGW50N65F5XKSA1 Part Data Attributes

AIGW50N65F5XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
AIGW50N65F5XKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 4.8 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 270 W
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 196 ns
Turn-on Time-Nom (ton) 35 ns
VCEsat-Max 2.1 V

Alternate Parts for AIGW50N65F5XKSA1

This table gives cross-reference parts and alternative options found for AIGW50N65F5XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AIGW50N65F5XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IGW50N65F5 Insulated Gate Bipolar Transistor, Infineon Technologies AG AIGW50N65F5XKSA1 vs IGW50N65F5
AIGW50N65F5 Insulated Gate Bipolar Transistor, Infineon Technologies AG AIGW50N65F5XKSA1 vs AIGW50N65F5
IGW50N65F5A Insulated Gate Bipolar Transistor Infineon Technologies AG AIGW50N65F5XKSA1 vs IGW50N65F5A
Part Number Description Manufacturer Compare
IGW50N65F5 Insulated Gate Bipolar Transistor, Infineon Technologies AG AIGW50N65F5XKSA1 vs IGW50N65F5
IGW50N65F5A Insulated Gate Bipolar Transistor Infineon Technologies AG AIGW50N65F5XKSA1 vs IGW50N65F5A
AIGW50N65F5 Insulated Gate Bipolar Transistor, Infineon Technologies AG AIGW50N65F5XKSA1 vs AIGW50N65F5
AIGW40N65H5XKSA1 Insulated Gate Bipolar Transistor, Infineon Technologies AG AIGW50N65F5XKSA1 vs AIGW40N65H5XKSA1
APT44GA60B Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-247 Microchip Technology Inc AIGW50N65F5XKSA1 vs APT44GA60B
AIGW40N65H5 Insulated Gate Bipolar Transistor, Infineon Technologies AG AIGW50N65F5XKSA1 vs AIGW40N65H5
APT44GA60B Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3 Microsemi Corporation AIGW50N65F5XKSA1 vs APT44GA60B
IGW40N65H5A Insulated Gate Bipolar Transistor Infineon Technologies AG AIGW50N65F5XKSA1 vs IGW40N65H5A

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