Part Details for AOB190A60L by Alpha & Omega Semiconductor
Overview of AOB190A60L by Alpha & Omega Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for AOB190A60L
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1807-1-ND
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DigiKey | MOSFET N-CH 600V 20A TO263 Min Qty: 1 Lead time: 28 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
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$1.4050 / $3.0100 | Buy Now |
DISTI #
AOB190A60L
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TME | Transistor: N-MOSFET, unipolar, 600V, 12A, 208W, TO263 Min Qty: 1 | 41 |
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$2.9900 / $4.1600 | Buy Now |
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Chip1Cloud | MOSFET N-CH 600V 20A TO263 / N-Channel 600 V 20A (Tc) 208W (Tc) Surface Mount TO-263 (D2Pak) | 72000 |
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RFQ |
Part Details for AOB190A60L
AOB190A60L CAD Models
AOB190A60L Part Data Attributes:
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AOB190A60L
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AOB190A60L
Alpha & Omega Semiconductor
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2018-08-13 | |
Avalanche Energy Rating (Eas) | 410 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 1.25 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 208 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |