Part Details for AON6411 by Alpha & Omega Semiconductor
Overview of AON6411 by Alpha & Omega Semiconductor
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AON6411
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
785-1495-1-ND
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DigiKey | MOSFET P-CH 20V 47A/85A 8DFN Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
101266 In Stock |
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$0.6075 / $1.1400 | Buy Now |
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DISTI #
A01:0375_04918153
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Arrow Electronics | Trans MOSFET P-CH 20V 47A 8-Pin DFN EP Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks | Asia - 24000 |
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$0.5924 | Buy Now |
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DISTI #
66681962
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Verical | Trans MOSFET P-CH 20V 47A 8-Pin DFN EP Min Qty: 3000 Package Multiple: 3000 | Americas - 24000 |
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$0.5924 | Buy Now |
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Quest Components | 24 |
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$1.0675 / $2.1350 | Buy Now | |
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DISTI #
AON6411
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TME | Transistor: P-MOSFET, unipolar, -20V, -67A, 62.5W, DFN5x6 Min Qty: 1 | 884 |
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$0.6700 / $1.0000 | Buy Now |
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Chip1Cloud | MOSFET P-CH 20V 47A 8DFN | 32200 |
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RFQ | |
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New Advantage Corporation | Power Field-Effect Transistor, 85A I(D), 20V,0.0036ohm, 1-Element, P-Channel, Silicon,Metal-oxide Semiconductor FET RoHS: Compliant Min Qty: 1 Package Multiple: 10 | 149 |
|
$1.1000 / $1.4200 | Buy Now |
Part Details for AON6411
AON6411 CAD Models
AON6411 Part Data Attributes:
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AON6411
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AON6411
Alpha & Omega Semiconductor
Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Avalanche Energy Rating (Eas) | 245 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 85 A | |
| Drain-source On Resistance-Max | 0.0036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1395 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |