Part Details for APT11N80BC3G by Microchip Technology Inc
Overview of APT11N80BC3G by Microchip Technology Inc
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for APT11N80BC3G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
APT11N80BC3G-ND
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DigiKey | MOSFET N-CH 800V 11A TO247 Min Qty: 1 Lead time: 38 Weeks Container: Tube |
90 In Stock |
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$3.6500 / $4.4700 | Buy Now |
DISTI #
APT11N80BC3G
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Avnet Americas | Super Junction MOSFET N-Channel 800V 11A 3-Pin TO-247 - Rail/Tube (Alt: APT11N80BC3G) RoHS: Not Compliant Min Qty: 120 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Container: Tube | 0 |
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$3.6400 / $4.4700 | Buy Now |
DISTI #
494-APT11N80BC3G
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Mouser Electronics | MOSFET MOSFET COOLMOS 800 V 11 A TO-247 RoHS: Compliant | 0 |
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$3.8700 / $4.4700 | Order Now |
DISTI #
APT11N80BC3G
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Microchip Technology Inc | MOSFET SUPERJUNCTION 800 V 11 A TO-247, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
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$3.4500 / $4.4700 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 120 Package Multiple: 1 | 0 |
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$3.9000 | Buy Now |
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Onlinecomponents.com | MOSFET (Metal Oxide) Transistor - N-Channel - 800 V - 11A Continuous Drain (Id) @ 25°C - 450mOhm @ 7.1A, 10V - TO-247-3 Package - Through Hole. | 24 Factory Stock |
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$3.4800 / $4.4300 | Buy Now |
DISTI #
APT11N80BC3G
|
Avnet Americas | Super Junction MOSFET N-Channel 800V 11A 3-Pin TO-247 - Rail/Tube (Alt: APT11N80BC3G) RoHS: Not Compliant Min Qty: 120 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Container: Tube | 0 |
|
$3.6400 / $4.4700 | Buy Now |
DISTI #
APT11N80BC3G
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TME | Transistor: N-MOSFET, unipolar, 800V, 11A, Idm: 33A, 156W, TO247-3 Min Qty: 1 | 0 |
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$5.1800 / $6.5100 | RFQ |
DISTI #
APT11N80BC3G
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Avnet Americas | Super Junction MOSFET N-Channel 800V 11A 3-Pin TO-247 - Rail/Tube (Alt: APT11N80BC3G) RoHS: Not Compliant Min Qty: 120 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Container: Tube | 0 |
|
$3.6400 / $4.4700 | Buy Now |
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NAC | FG, MOSFET, 800V, TO-247, RoHS RoHS: Compliant Min Qty: 85 Package Multiple: 1 Container: Tube | 0 |
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$3.5600 / $4.2900 | Buy Now |
Part Details for APT11N80BC3G
APT11N80BC3G CAD Models
APT11N80BC3G Part Data Attributes
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APT11N80BC3G
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT11N80BC3G
Microchip Technology Inc
Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
Factory Lead Time | 38 Weeks | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 470 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 33 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for APT11N80BC3G
This table gives cross-reference parts and alternative options found for APT11N80BC3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT11N80BC3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
APT11N80BC3 | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | APT11N80BC3G vs APT11N80BC3 |
APT11N80BC3G | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | APT11N80BC3G vs APT11N80BC3G |