Datasheets
APT11N80BC3G by:

Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Part Details for APT11N80BC3G by Microchip Technology Inc

Overview of APT11N80BC3G by Microchip Technology Inc

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Applications Automotive

Price & Stock for APT11N80BC3G

Part # Distributor Description Stock Price Buy
DISTI # APT11N80BC3G-ND
DigiKey MOSFET N-CH 800V 11A TO247 Min Qty: 1 Lead time: 38 Weeks Container: Tube 90
In Stock
  • 1 $4.4700
  • 100 $3.6500
$3.6500 / $4.4700 Buy Now
DISTI # APT11N80BC3G
Avnet Americas Super Junction MOSFET N-Channel 800V 11A 3-Pin TO-247 - Rail/Tube (Alt: APT11N80BC3G) RoHS: Not Compliant Min Qty: 120 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Container: Tube 0
  • 1 $4.4700
  • 100 $3.8700
  • 250 $3.7200
  • 500 $3.6400
$3.6400 / $4.4700 Buy Now
DISTI # 494-APT11N80BC3G
Mouser Electronics MOSFET MOSFET COOLMOS 800 V 11 A TO-247 RoHS: Compliant 0
  • 1 $4.4700
  • 100 $3.8700
$3.8700 / $4.4700 Order Now
DISTI # APT11N80BC3G
Microchip Technology Inc MOSFET SUPERJUNCTION 800 V 11 A TO-247, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $4.4700
  • 100 $3.8700
  • 250 $3.7200
  • 500 $3.6400
  • 1,000 $3.5600
  • 5,000 $3.4500
$3.4500 / $4.4700 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 120 Package Multiple: 1 0
  • 120 $3.9000
$3.9000 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Transistor - N-Channel - 800 V - 11A Continuous Drain (Id) @ 25°C - 450mOhm @ 7.1A, 10V - TO-247-3 Package - Through Hole. 24 Factory Stock
  • 5 $4.4300
  • 50 $4.0500
  • 100 $3.8900
  • 250 $3.8300
  • 500 $3.6400
  • 1,000 $3.5800
  • 2,500 $3.5300
  • 5,000 $3.4800
$3.4800 / $4.4300 Buy Now
DISTI # APT11N80BC3G
Avnet Americas Super Junction MOSFET N-Channel 800V 11A 3-Pin TO-247 - Rail/Tube (Alt: APT11N80BC3G) RoHS: Not Compliant Min Qty: 120 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Container: Tube 0
  • 1 $4.4700
  • 100 $3.8700
  • 250 $3.7200
  • 500 $3.6400
$3.6400 / $4.4700 Buy Now
DISTI # APT11N80BC3G
TME Transistor: N-MOSFET, unipolar, 800V, 11A, Idm: 33A, 156W, TO247-3 Min Qty: 1 0
  • 1 $6.5100
  • 3 $5.8600
  • 10 $5.1800
$5.1800 / $6.5100 RFQ
DISTI # APT11N80BC3G
Avnet Americas Super Junction MOSFET N-Channel 800V 11A 3-Pin TO-247 - Rail/Tube (Alt: APT11N80BC3G) RoHS: Not Compliant Min Qty: 120 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Container: Tube 0
  • 1 $4.4700
  • 100 $3.8700
  • 250 $3.7200
  • 500 $3.6400
$3.6400 / $4.4700 Buy Now
NAC FG, MOSFET, 800V, TO-247, RoHS RoHS: Compliant Min Qty: 85 Package Multiple: 1 Container: Tube 0
  • 1 $4.2900
  • 100 $3.8900
  • 500 $3.6500
  • 1,000 $3.5600
$3.5600 / $4.2900 Buy Now
Master Electronics MOSFET (Metal Oxide) Transistor - N-Channel - 800 V - 11A Continuous Drain (Id) @ 25°C - 450mOhm @ 7.1A, 10V - TO-247-3 Package - Through Hole. 24 Factory Stock
  • 5 $4.4300
  • 50 $4.0500
  • 100 $3.8900
  • 250 $3.8300
  • 500 $3.6400
  • 1,000 $3.5800
  • 2,500 $3.5300
  • 5,000 $3.4800
$3.4800 / $4.4300 Buy Now

Part Details for APT11N80BC3G

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APT11N80BC3G Part Data Attributes

APT11N80BC3G Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT11N80BC3G Microchip Technology Inc Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
Factory Lead Time 38 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 470 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 33 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for APT11N80BC3G

This table gives cross-reference parts and alternative options found for APT11N80BC3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT11N80BC3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT11N80BC3 Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation APT11N80BC3G vs APT11N80BC3
APT11N80BC3G Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation APT11N80BC3G vs APT11N80BC3G
Part Number Description Manufacturer Compare
STP13N80K5 N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package STMicroelectronics APT11N80BC3G vs STP13N80K5
IPP80R450P7 Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG APT11N80BC3G vs IPP80R450P7

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