Datasheets
APT53N60BC6 by:

Power Field-Effect Transistor, 53A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Details for APT53N60BC6 by Microchip Technology Inc

Overview of APT53N60BC6 by Microchip Technology Inc

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for APT53N60BC6

Part # Distributor Description Stock Price Buy
DISTI # 78AH6084
Newark Mosfet Coolmos 600 V 53 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT53N60BC6 Min Qty: 70 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $8.3500
  • 100 $7.2100
  • 250 $6.9400
  • 500 $6.7800
$6.7800 / $8.3500 Buy Now
DISTI # APT53N60BC6-ND
DigiKey MOSFET N-CH 600V 53A TO247 Min Qty: 1 Lead time: 38 Weeks Container: Tube 67
In Stock
  • 1 $8.3500
$8.3500 Buy Now
DISTI # APT53N60BC6
Avnet Americas Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT53N60BC6) RoHS: Not Compliant Min Qty: 70 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Container: Tube 0
  • 1 $8.3500
  • 100 $7.2100
  • 250 $6.9400
  • 500 $6.7800
$6.7800 / $8.3500 Buy Now
DISTI # 494-APT53N60BC6
Mouser Electronics MOSFET MOSFET SUPERJUNCTION 600 V 53 A TO-247 RoHS: Compliant 0
  • 1 $8.3500
  • 100 $7.2100
$7.2100 / $8.3500 Order Now
DISTI # APT53N60BC6
Microchip Technology Inc MOSFET SUPERJUNCTION 600 V 53 A TO-247, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $8.3500
  • 100 $7.2100
  • 250 $6.9400
  • 500 $6.7800
  • 1,000 $6.6300
  • 5,000 $6.4000
$6.4000 / $8.3500 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 70 Package Multiple: 1 0
  • 70 $7.2400
$7.2400 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 Tube 0
  • 5 $8.2400
  • 25 $7.4300
  • 50 $7.2300
  • 100 $7.0400
  • 250 $6.7700
  • 500 $6.6700
  • 1,000 $6.5700
$6.5700 / $8.2400 Buy Now
DISTI # APT53N60BC6
Avnet Americas Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT53N60BC6) RoHS: Not Compliant Min Qty: 70 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Container: Tube 0
  • 1 $8.3500
  • 100 $7.2100
  • 250 $6.9400
  • 500 $6.7800
$6.7800 / $8.3500 Buy Now
DISTI # APT53N60BC6
TME Transistor: N-MOSFET, unipolar, 600V, 53A, 417W, TO247 Min Qty: 1 0
  • 1 $14.0600
  • 3 $12.4200
  • 10 $11.2300
$11.2300 / $14.0600 RFQ
NAC FG, MOSFET, 600V, 53A, TO-247 RoHS: Compliant Min Qty: 46 Package Multiple: 1 Container: Tube 0
  • 1 $7.9900
  • 100 $7.2400
  • 500 $6.7900
  • 1,000 $6.6200
$6.6200 / $7.9900 Buy Now
DISTI # APT53N60BC6
Avnet Silica Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 (Alt: APT53N60BC6) RoHS: Compliant Min Qty: 70 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT53N60BC6
EBV Elektronik Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 (Alt: APT53N60BC6) RoHS: Compliant Min Qty: 70 Package Multiple: 1 Lead time: 39 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 Tube 0
  • 5 $8.2400
  • 25 $7.4300
  • 50 $7.2300
  • 100 $7.0400
  • 250 $6.7700
  • 500 $6.6700
  • 1,000 $6.5700
$6.5700 / $8.2400 Buy Now

Part Details for APT53N60BC6

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APT53N60BC6 Part Data Attributes:

APT53N60BC6 Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT53N60BC6 Microchip Technology Inc Power Field-Effect Transistor, 53A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 38 Weeks
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 1135 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 53 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 159 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT53N60BC6

This table gives cross-reference parts and alternative options found for APT53N60BC6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT53N60BC6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT53N60SC6 Power Field-Effect Transistor, 53A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 Microsemi Corporation APT53N60BC6 vs APT53N60SC6
TK50J60U TRANSISTOR 50 A, 600 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-16C1S, SC-65, TO-3P(N), 3 PIN, FET General Purpose Power Toshiba America Electronic Components APT53N60BC6 vs TK50J60U
FCH070N60E Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 52 A, 70 mΩ, TO-247, 450-TUBE onsemi APT53N60BC6 vs FCH070N60E

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