Datasheets
APTGT300SK60D3G by:

Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN

Part Details for APTGT300SK60D3G by Microsemi Corporation

Overview of APTGT300SK60D3G by Microsemi Corporation

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Part Details for APTGT300SK60D3G

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APTGT300SK60D3G Part Data Attributes

APTGT300SK60D3G Microsemi Corporation
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APTGT300SK60D3G Microsemi Corporation Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Package Description MODULE-5
Pin Count 11
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Microsemi Corporation
Case Connection ISOLATED
Collector Current-Max (IC) 400 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X5
Number of Elements 1
Number of Terminals 5
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 940 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 190 ns
VCEsat-Max 1.9 V

Alternate Parts for APTGT300SK60D3G

This table gives cross-reference parts and alternative options found for APTGT300SK60D3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APTGT300SK60D3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APTGF250DA60D3G Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN Microsemi Corporation APTGT300SK60D3G vs APTGF250DA60D3G
APTGT300DA60 Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, MODULE-5 Microsemi Corporation APTGT300SK60D3G vs APTGT300DA60
FD300R06KE3HOSA1 Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG APTGT300SK60D3G vs FD300R06KE3HOSA1
APTGT300DA60G Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc APTGT300SK60D3G vs APTGT300DA60G
SKM300GAL063D Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, CASE D57, SEMITRANS3-7 SEMIKRON APTGT300SK60D3G vs SKM300GAL063D
APTGT300DA60D3G Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc APTGT300SK60D3G vs APTGT300DA60D3G
APTGT300SK60D3G Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc APTGT300SK60D3G vs APTGT300SK60D3G
APTGT300SK60G Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc APTGT300SK60D3G vs APTGT300SK60G

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