Datasheets
APTGT600U170D4G by:

Insulated Gate Bipolar Transistor, 1100A I(C), 1700V V(BR)CES, N-Channel

Part Details for APTGT600U170D4G by Microchip Technology Inc

Overview of APTGT600U170D4G by Microchip Technology Inc

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Price & Stock for APTGT600U170D4G

Part # Distributor Description Stock Price Buy
DISTI # 78AH5365
Newark Pm-Igbt-Tfs-D4 D4 Box Rohs Compliant: Yes |Microchip APTGT600U170D4G Min Qty: 4 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $421.1000
  • 50 $352.8100
  • 100 $318.6700
  • 250 $284.5300
  • 500 $250.3800
$250.3800 / $421.1000 Buy Now
DISTI # APTGT600U170D4G-ND
DigiKey IGBT MODULE 1700V 1100A 2900W D4 Min Qty: 1 Lead time: 37 Weeks Container: Bulk 30
In Stock
  • 1 $421.1000
$421.1000 Buy Now
DISTI # APTGT600U170D4G
Avnet Americas Trans IGBT Module N-CH 1.7KV 1.1KA 4-Pin Case D 4 - Boxed Product (Development Kits) (Alt: APTGT600U170D4G) RoHS: Compliant Min Qty: 4 Package Multiple: 1 Lead time: 37 Weeks, 0 Days Container: Box 0
  • 1 $421.1000
  • 50 $352.8100
  • 100 $318.6700
  • 250 $284.5300
  • 500 $252.9111
$252.9111 / $421.1000 Buy Now
DISTI # 494-APTGT600U170D4G
Mouser Electronics IGBT Modules CC7016 RoHS: Compliant 0
  • 4 $421.1000
$421.1000 Order Now
DISTI # APTGT600U170D4G
Microchip Technology Inc CC7016, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $421.1000
  • 50 $352.8100
  • 100 $318.6700
  • 250 $284.5300
  • 500 $250.3800
  • 1,000 $227.6200
  • 5,000 $209.4100
$209.4100 / $421.1000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 4 Package Multiple: 1 0
  • 4 $303.5000
$303.5000 Buy Now
Onlinecomponents.com   0
  • 1 $455.2400
  • 2 $341.4300
  • 3 $318.6700
  • 4 $312.2900
$312.2900 / $455.2400 Buy Now
DISTI # APTGT600U170D4G
Avnet Americas Trans IGBT Module N-CH 1.7KV 1.1KA 4-Pin Case D 4 - Boxed Product (Development Kits) (Alt: APTGT600U170D4G) RoHS: Compliant Min Qty: 4 Package Multiple: 1 Lead time: 37 Weeks, 0 Days Container: Box 0
  • 1 $421.1000
  • 50 $352.8100
  • 100 $318.6700
  • 250 $284.5300
  • 500 $252.9111
$252.9111 / $421.1000 Buy Now
NAC CC7016 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Box 0
  • 1 $325.1700
  • 100 $299.5000
  • 500 $284.5200
  • 800 $277.5900
$277.5900 / $325.1700 Buy Now
DISTI # APTGT600U170D4G
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 4 0
  • 4 $307.5100
  • 25 $299.5700
$299.5700 / $307.5100 Buy Now
DISTI # APTGT600U170D4G
Avnet Silica Trans IGBT Module N-CH 1.7KV 1.1KA 4-Pin Case D 4 (Alt: APTGT600U170D4G) RoHS: Compliant Min Qty: 4 Package Multiple: 1 Lead time: 5 Weeks, 3 Days Silica - 0
Buy Now
DISTI # APTGT600U170D4G
EBV Elektronik Trans IGBT Module N-CH 1.7KV 1.1KA 4-Pin Case D 4 (Alt: APTGT600U170D4G) RoHS: Compliant Min Qty: 4 Package Multiple: 1 Lead time: 5 Weeks, 3 Days EBV - 0
Buy Now
Master Electronics   0
  • 1 $455.2400
  • 2 $341.4300
  • 3 $318.6700
  • 4 $312.2900
$312.2900 / $455.2400 Buy Now

Part Details for APTGT600U170D4G

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APTGT600U170D4G Part Data Attributes:

APTGT600U170D4G Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APTGT600U170D4G Microchip Technology Inc Insulated Gate Bipolar Transistor, 1100A I(C), 1700V V(BR)CES, N-Channel
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description ROHS COMPLIANT, D4, 4 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 37 Weeks
Additional Feature AVALANCHE RATED
Case Connection ISOLATED
Collector Current-Max (IC) 1100 A
Collector-Emitter Voltage-Max 1700 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X4
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2900 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1230 ns
Turn-on Time-Nom (ton) 430 ns
VCEsat-Max 2.4 V

Alternate Parts for APTGT600U170D4G

This table gives cross-reference parts and alternative options found for APTGT600U170D4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APTGT600U170D4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APTGT600U170D4 Insulated Gate Bipolar Transistor, 1100A I(C), 1700V V(BR)CES, N-Channel, MODULE-4 Microsemi Corporation APTGT600U170D4G vs APTGT600U170D4
APTGT600U170D4G Insulated Gate Bipolar Transistor, 1100A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, D4, 4 PIN Microsemi Corporation APTGT600U170D4G vs APTGT600U170D4G
Part Number Description Manufacturer Compare
APTGT600U170D4G Insulated Gate Bipolar Transistor, 1100A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, D4, 4 PIN Microsemi Corporation APTGT600U170D4G vs APTGT600U170D4G
APTGT600U170D4 Insulated Gate Bipolar Transistor, 1100A I(C), 1700V V(BR)CES, N-Channel, MODULE-4 Microsemi Corporation APTGT600U170D4G vs APTGT600U170D4

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