Part Details for APTM20HM20STG by Microsemi Corporation
Overview of APTM20HM20STG by Microsemi Corporation
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Part Details for APTM20HM20STG
APTM20HM20STG CAD Models
APTM20HM20STG Part Data Attributes:
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APTM20HM20STG
Microsemi Corporation
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APTM20HM20STG
Microsemi Corporation
Power Field-Effect Transistor, 89A I(D), 200V, 0.024ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP4, 14 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | MODULE | |
| Package Description | ROHS COMPLIANT, SP4, 14 PIN | |
| Pin Count | 14 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 89 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X14 | |
| Number of Elements | 4 | |
| Number of Terminals | 14 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 357 W | |
| Pulsed Drain Current-Max (IDM) | 356 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |