Part Details for AUIRF1010EZSTRL by Infineon Technologies AG
Overview of AUIRF1010EZSTRL by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for AUIRF1010EZSTRL
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | AUIRF1010 - 55V-60V N-Channel Automotive MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 10 |
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$1.1000 / $1.2900 | Buy Now |
Part Details for AUIRF1010EZSTRL
AUIRF1010EZSTRL CAD Models
AUIRF1010EZSTRL Part Data Attributes
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AUIRF1010EZSTRL
Infineon Technologies AG
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Datasheet
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Compare Parts:
AUIRF1010EZSTRL
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF1010EZSTRL
This table gives cross-reference parts and alternative options found for AUIRF1010EZSTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF1010EZSTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF1010EZSTRLPBF | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | AUIRF1010EZSTRL vs IRF1010EZSTRLPBF |
| IRF1010EZSPBF | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | AUIRF1010EZSTRL vs IRF1010EZSPBF |
| IRF1010EZSPBF | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | AUIRF1010EZSTRL vs IRF1010EZSPBF |
| IRF1010EZSTRL | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | AUIRF1010EZSTRL vs IRF1010EZSTRL |
| IRF1010EZS | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | AUIRF1010EZSTRL vs IRF1010EZS |
| IRF1010EZSTRR | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | AUIRF1010EZSTRL vs IRF1010EZSTRR |
| AUIRF1010EZSTRR | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | International Rectifier | AUIRF1010EZSTRL vs AUIRF1010EZSTRR |