Part Details for AUIRF9Z34N by International Rectifier
Overview of AUIRF9Z34N by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AUIRF9Z34N
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-AUIRF9Z34N-ND
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DigiKey | AUTOMOTIVE HEXFET P CHANNEL Min Qty: 388 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
11306 In Stock |
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$0.7700 | Buy Now |
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Rochester Electronics | AUIRF9Z34 - 20V-150V P-Channel Automotive MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 11686 |
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$0.6644 / $0.7817 | Buy Now |
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ComSIT USA | AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 30 |
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RFQ |
Part Details for AUIRF9Z34N
AUIRF9Z34N CAD Models
AUIRF9Z34N Part Data Attributes
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AUIRF9Z34N
International Rectifier
Buy Now
Datasheet
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Compare Parts:
AUIRF9Z34N
International Rectifier
Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-220AB | |
Package Description | ROHS COMPLIANT, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 180 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 19 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 68 W | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AUIRF9Z34N
This table gives cross-reference parts and alternative options found for AUIRF9Z34N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF9Z34N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF9Z34N | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | AUIRF9Z34N vs IRF9Z34N |
AUIRF9Z34N | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | AUIRF9Z34N vs AUIRF9Z34N |
IRF9Z34NPBF | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | AUIRF9Z34N vs IRF9Z34NPBF |
IRF9Z34NPBF | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | AUIRF9Z34N vs IRF9Z34NPBF |