Datasheets
AUIRF9Z34N by:

Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

Part Details for AUIRF9Z34N by International Rectifier

Overview of AUIRF9Z34N by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for AUIRF9Z34N

Part # Distributor Description Stock Price Buy
DISTI # 2156-AUIRF9Z34N-ND
DigiKey AUTOMOTIVE HEXFET P CHANNEL Min Qty: 388 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 11306
In Stock
  • 388 $0.7700
$0.7700 Buy Now
Rochester Electronics AUIRF9Z34 - 20V-150V P-Channel Automotive MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 11686
  • 1 $0.7817
  • 25 $0.7661
  • 100 $0.7348
  • 500 $0.7035
  • 1,000 $0.6644
$0.6644 / $0.7817 Buy Now
ComSIT USA AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant Europe - 30
RFQ

Part Details for AUIRF9Z34N

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AUIRF9Z34N Part Data Attributes

AUIRF9Z34N International Rectifier
Buy Now Datasheet
Compare Parts:
AUIRF9Z34N International Rectifier Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 180 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 68 W
Pulsed Drain Current-Max (IDM) 68 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRF9Z34N

This table gives cross-reference parts and alternative options found for AUIRF9Z34N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF9Z34N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF9Z34N Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier AUIRF9Z34N vs IRF9Z34N
AUIRF9Z34N Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG AUIRF9Z34N vs AUIRF9Z34N
IRF9Z34NPBF Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG AUIRF9Z34N vs IRF9Z34NPBF
IRF9Z34NPBF Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier AUIRF9Z34N vs IRF9Z34NPBF
Part Number Description Manufacturer Compare
BUZ71 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC AUIRF9Z34N vs BUZ71
HUFA76409D3S 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation AUIRF9Z34N vs HUFA76409D3S
RFD14N05_NL 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN Rochester Electronics LLC AUIRF9Z34N vs RFD14N05_NL
HUF76409D3 17A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation AUIRF9Z34N vs HUF76409D3
2SJ174 Power Field-Effect Transistor, 20A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Hitachi Ltd AUIRF9Z34N vs 2SJ174
HUF76419D3 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Rochester Electronics LLC AUIRF9Z34N vs HUF76419D3
IRFZ24NPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier AUIRF9Z34N vs IRFZ24NPBF
BUK9575-55A TRANSISTOR 20 A, 55 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power NXP Semiconductors AUIRF9Z34N vs BUK9575-55A
MTD3055V-T4 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 Motorola Mobility LLC AUIRF9Z34N vs MTD3055V-T4
HUF75307P3 15A, 55V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation AUIRF9Z34N vs HUF75307P3

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