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Part Details for AUIRL7766M2TR by Infineon Technologies AG
Overview of AUIRL7766M2TR by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for AUIRL7766M2TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91Y4169
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Newark | Mosfet, Aec-Q101, N-Ch, 100V, Directfetm4, Transistor Polarity:N Channel, Continuous Drain Current Id:51A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.008Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Powerrohs Compliant: Yes |Infineon AUIRL7766M2TR Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Part Details for AUIRL7766M2TR
AUIRL7766M2TR CAD Models
AUIRL7766M2TR Part Data Attributes
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AUIRL7766M2TR
Infineon Technologies AG
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Datasheet
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AUIRL7766M2TR
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 237 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 62.5 W | |
| Pulsed Drain Current-Max (IDM) | 204 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |