Part Details for BCR22PNH6327XTSA1 by Infineon Technologies AG
Overview of BCR22PNH6327XTSA1 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for BCR22PNH6327XTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AJ0030
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Newark | Brt Trans, 22K/22Kohm, Sot-363, Collector Emitter Voltage V(Br)Ceo:50V, Continuous Collector Current Ic:100Ma, Base Input Resistor R1:22Kohm, Base-Emitter Resistor R2:22Kohm, Resistor Ratio, R1/R2:1(Ratio), Rf Transistor Rohs Compliant: Yes |Infineon BCR22PNH6327XTSA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.1090 | Buy Now |
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DISTI #
BCR22PNH6327XTSA1CT-ND
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DigiKey | TRANS NPN/PNP PREBIAS SOT363 Min Qty: 1 Lead time: 4 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
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$0.0718 / $0.0856 | Buy Now |
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DISTI #
BCR22PNH6327XTSA1
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Avnet Americas | Trans Digital BJT NPN/PNP 50V 100mA 250mW 6-Pin SOT-363 T/R - Tape and Reel (Alt: BCR22PNH6327XTSA1) RoHS: Not Compliant Min Qty: 18000 Package Multiple: 3000 Lead time: 4 Weeks, 0 Days Container: Reel | 0 |
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$0.0713 / $0.0814 | Buy Now |
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DISTI #
726-BCR22PNH6327XTSA
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Mouser Electronics | Digital Transistors AF DIGITAL TRANSISTOR RoHS: Compliant | 95028 |
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$0.0710 / $0.1200 | Buy Now |
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Future Electronics | 50V 100mA 130MHz 250mW 1 NPN, 1 PNP Pre-Biased Bipolar Transistor - PG-SOT363-PO RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 4 Weeks Container: Reel | 15000Reel |
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$0.0706 / $0.0789 | Buy Now |
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Future Electronics | 50V 100mA 130MHz 250mW 1 NPN, 1 PNP Pre-Biased Bipolar Transistor - PG-SOT363-PO RoHS: Compliant pbFree: Yes Min Qty: 18000 Package Multiple: 3000 Lead time: 4 Weeks Container: Reel | 0Reel |
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$0.0706 / $0.0783 | Buy Now |
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DISTI #
70393852
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Verical | Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R RoHS: Compliant Min Qty: 18000 Package Multiple: 18000 Date Code: 2312 | Americas - 378000 |
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$0.0819 | Buy Now |
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Chip1Cloud | TRANS NPN/PNP PREBIAS SOT363 | 1100 |
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RFQ | |
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DISTI #
SP000757916
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EBV Elektronik | Trans Digital BJT NPN/PNP 50V 100mA 250mW 6-Pin SOT-363 T/R (Alt: SP000757916) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 5 Weeks, 0 Days | EBV - 240000 |
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Buy Now | |
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New Advantage Corporation | BCR22PN Series NPN/PNP 50 V 100 mA Silicon Digital Transistor Array - SOT-363-6 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 12000 |
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$0.0709 / $0.0760 | Buy Now |
Part Details for BCR22PNH6327XTSA1
BCR22PNH6327XTSA1 CAD Models
BCR22PNH6327XTSA1 Part Data Attributes
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BCR22PNH6327XTSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BCR22PNH6327XTSA1
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT PACKAGE-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 50 | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN AND PNP | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 130 MHz |