Datasheets
BD244CTU by:

6.0 A, 100 V PNP Bipolar Power Transistor, 1000-TUBE

Part Details for BD244CTU by onsemi

Overview of BD244CTU by onsemi

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Price & Stock for BD244CTU

Part # Distributor Description Stock Price Buy
DISTI # 01AC8260
Newark Pnp/7A/100V To-220/Tube Rohs Compliant: Yes |Onsemi BD244CTU Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Rochester Electronics BD244C - 6.0 A, 100 V PNP Bipolar Power Transistor RoHS: Compliant Status: Obsolete Min Qty: 1 800
  • 1 $0.5187
  • 25 $0.5083
  • 100 $0.4876
  • 500 $0.4668
  • 1,000 $0.4409
$0.4409 / $0.5187 Buy Now
DISTI # BD244CTU
Avnet Silica Bipolar Transistors - BJT PNP/7A/100V/TO-220 (Alt: BD244CTU) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 3 Days Silica - 0
Buy Now
DISTI # 3615298
Farnell 6.0 A, 100 V PNP BIPOLAR POWER TRANSISTO RoHS: Compliant Min Qty: 1000 Lead time: 21 Weeks, 1 Days Container: Tube 0
  • 1,000 $0.4534
$0.4534 Buy Now
Flip Electronics Stock, ship today 59
  • 1 $0.4600
$0.4600 RFQ

Part Details for BD244CTU

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BD244CTU Part Data Attributes:

BD244CTU onsemi
Buy Now Datasheet
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BD244CTU onsemi 6.0 A, 100 V PNP Bipolar Power Transistor, 1000-TUBE
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description TO-220, 3 PIN
Manufacturer Package Code 340AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 23 Weeks
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 6 A
Collector-Emitter Voltage-Max 100 V
Configuration SINGLE
DC Current Gain-Min (hFE) 15
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 65 W
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 3 MHz
VCEsat-Max 1.5 V

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