Part Details for BLL6H1214-500,112 by Ampleon
Overview of BLL6H1214-500,112 by Ampleon
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Entertainment and Gaming
Automotive
Price & Stock for BLL6H1214-500,112
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
568-7559-ND
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DigiKey | RF MOSFET LDMOS 50V SOT539A Min Qty: 1 Lead time: 16 Weeks Container: Tray |
178 In Stock |
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$597.2200 | Buy Now |
DISTI #
BLL6H1214-500,112
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Avnet Americas | Trans MOSFET N-CH 100V 72A 5-Pin LDMOST Blister - Rail/Tube (Alt: BLL6H1214-500,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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Flip Electronics | Stock | 449 |
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RFQ |
Part Details for BLL6H1214-500,112
BLL6H1214-500,112 CAD Models
BLL6H1214-500,112 Part Data Attributes
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BLL6H1214-500,112
Ampleon
Buy Now
Datasheet
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Compare Parts:
BLL6H1214-500,112
Ampleon
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
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Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
Package Description | FLANGE MOUNT, R-CDFM-F4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Ampleon USA Inc. | |
Case Connection | SOURCE | |
Configuration | COMMON SOURCE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 45 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-CDFM-F4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |