Datasheets
BLS7G3135L-350P,11 by:

RF Small Signal Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4

Part Details for BLS7G3135L-350P,11 by Ampleon

Overview of BLS7G3135L-350P,11 by Ampleon

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Price & Stock for BLS7G3135L-350P,11

Part # Distributor Description Stock Price Buy
DISTI # 2156-BLS7G3135L-350P,11-ND
DigiKey RF FET LDMOS 65V 10DB SOT539A Min Qty: 1 Lead time: 16 Weeks Container: Bulk MARKETPLACE PRODUCT 92
In Stock
  • 1 $858.0000
$858.0000 Buy Now
Rochester Electronics BLS7G3135L-350P - Power LDMOS transistor RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 92
  • 1 $866.2500
  • 25 $848.9300
  • 100 $814.2800
  • 500 $779.6300
  • 1,000 $736.3100
$736.3100 / $866.2500 Buy Now
Chip1Cloud RF FET LDMOS 65V 10DB SOT539A / Trans RF MOSFET N-CH 65V 5-Pin SOT-539A Bulk 1050
RFQ

Part Details for BLS7G3135L-350P,11

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BLS7G3135L-350P,11 Part Data Attributes:

BLS7G3135L-350P,11 Ampleon
Buy Now Datasheet
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BLS7G3135L-350P,11 Ampleon RF Small Signal Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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