Part Details for BSC016N04LSG by Infineon Technologies AG
Overview of BSC016N04LSG by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC016N04LSG
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 115 |
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RFQ | ||
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Quest Components | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | 24 |
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$1.3200 / $1.6500 | Buy Now |
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Quest Components | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | 92 |
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$1.2500 / $2.5000 | Buy Now |
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Quest Components | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | 109 |
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$1.3200 / $2.6400 | Buy Now |
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Quest Components | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | 105 |
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$1.3200 / $2.6400 | Buy Now |
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Wuhan P&S | 40V,100A,N-channel power MOSFET Min Qty: 1 | 4 |
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$1.0200 / $1.4200 | Buy Now |
Part Details for BSC016N04LSG
BSC016N04LSG CAD Models
BSC016N04LSG Part Data Attributes
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BSC016N04LSG
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC016N04LSG
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 295 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0023 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 139 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSC016N04LSG
This table gives cross-reference parts and alternative options found for BSC016N04LSG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC016N04LSG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSC093N04LSGATMA1 | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 | Infineon Technologies AG | BSC016N04LSG vs BSC093N04LSGATMA1 |
BSC027N04LSG | Power Field-Effect Transistor, 24A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC016N04LSG vs BSC027N04LSG |
BSC520N15NS3G | Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC016N04LSG vs BSC520N15NS3G |
SI7738DP-T1-GE3 | Power Field-Effect Transistor, 7.7A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | BSC016N04LSG vs SI7738DP-T1-GE3 |
BSC059N04LSGATMA1 | Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC016N04LSG vs BSC059N04LSGATMA1 |
BSC360N15NS3GATMA1 | Power Field-Effect Transistor, 33A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC016N04LSG vs BSC360N15NS3GATMA1 |
SIR166DP-T1-GE3 | Power Field-Effect Transistor, 40A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | BSC016N04LSG vs SIR166DP-T1-GE3 |
BSC360N15NS3G | Power Field-Effect Transistor, 33A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC016N04LSG vs BSC360N15NS3G |
SI7738DP-T1-E3 | Power Field-Effect Transistor, 7.7A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | BSC016N04LSG vs SI7738DP-T1-E3 |
SIR804DP-T1-GE3 | Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | BSC016N04LSG vs SIR804DP-T1-GE3 |